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34篇 您的检索式：作者名="Heikenfeld"

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	题名	作者	年代	出处	被引量
1	Spectral and Time-resolved Photoluminescence Studies of Eu-Doped GaN 显示文摘	Nyein E E H~mmerich U Heikenfeld J	2003	Appl Phys Lett2003，82，11：	1
2	Electrowetting retroreflectors: scalable and wide-spectrum modulation between corner cube and scattering reflection 显示文摘	M K Kilaru B Cumby J Heikenfeld	2009	Appl Phys Lett2009，94，04：	1
3	Observation and optical implication of oil dewetting patterns in electrowetting displays 显示文摘	B Sun J Heikenfeld	2008	J Micromech Microeng2008，18，02：	1
4	Electrowetting light valves with greater than 80% transmission, unlimited view Angle, and video response显示文摘	Heikenfeld J Steekl A J	2005	SID Symposium Digest of Technical Pa- pers2005，36，：	1
5	A full description of a simple and scalable fabrication process for eleetrowetting dis- plays显示文摘	Zhou K Heikenfeld J Dean K A	2009	Journal of Micromechanics and Mieroengineering2009，16，9：	1
6	Review paper: A criti cal review of the present and future prospects for electronic paper显示文摘	Jason Heikenfeld Paul Drzaic	2011	J Soe Inf Display2011，19，2：	1
7	Rare-Earth-Doped GaN: Growth, Properties, and Fabrication of Electroluminescent Devices显示文摘	Andrew J S Heikenfeld Dong S L	2002	IEEE Journal of Selected Topics in Quantum Electronics2002，8，4：	1
8	Reliable and low-voltage eleetrowetting on thin parylene films显示文摘	DHINDSA M KUIPER S HEIKENFELD J	2011	Thin Solid Films2011，519，10：	1
9	Alternating current thin-film electroluminescence of GaN:Er显示文摘	Heikenfeld J Steckl A J	2000	Appl Phys Lett2000，77，22：	1
10	Arthroscopic ver- sus conservative treatment of first anterior dislocation of the shoulder in adolescents显示文摘	Gigis I Heikenfeld R Kapinas A	2014	J Pediatr Orthop2014，34，4：	1
11	A full description of a simple and scalable fabrication process for electrowetting displays显示文摘	K Zhou J Heikenfeld K A Dean E M Howard M R Johnson	2009	Journal of Micromechanics and Microengineering2009，，：	1
12	Reversible electrowetting of vertically aligned superhydrophobic carbon nanofibers显示文摘	Dhindsa M S Smith N R Heikenfeld J		0，，21：	1
13	Electroluminescent devices using a high-temperature stable GaN-based phosphor and thick-film dielectric layer显示文摘	Heikenfeld J Andrew J S	2002	IEEE Transactions on Electron Devices2002，49，4：	1
14	Electroluminescent devices using a high-temperature stable GaN-based phosphor and thick-film dielectric layer显示文摘	Heikenfeld J Andrew J S	2002	IEEE Transactions on Electron Devices2002，49，4：	1
15	A full descrip- tion of a simple and scalable fabrication process for elec- trowetting displays 显示文摘	Zhou K Heikenfeld J Dean K A	2009	Journal of Micromechanics and Microengineering2009，19，06：	1
16	A full description of a simple and scalable fabrication process for electrowetting displays显示文摘	Zhou K Heikenfeld J Dean K A	2009	Journal of Micromechanics and Microengineering2009，15，06：	1
17	Rare-earth doped GaN:Growth,properties and fabrication of electroluminescent devices显示文摘	Steckl A J Heikenfeld J C Lee Dong Seon Garter M J Baker C C Wang Y Jones R		0，，：	1
18	显示文摘	Andrew J Steckl Heikenfeld Dong-Seon Lee	2002	IEEE Journal of Selected Topics in Quantum Electronics2002，8，4：	1
19	Spectral and time-resolved photolum-inescence studies of Eu-doped GaN 显示文摘	NYEIN E E HOMMERICH U HEIKENFELD J	2003	Appl Phys Lett2003，82，11：	1
20	Intense switchable fluorescence in light wave coupled electrowetting devices显示文摘	Steckl A J	2005	Applied Physics letters2005，86，1：	1

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