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24篇 您的检索式：作者名="Ibbetson J"

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	题名	作者	年代	出处	被引量
1	Polarization effects,surface states,and the source of electrons in AlGaN/GaN heterostructure field effect transistors显示文摘	Ibbetson J P Fini P T Ness K D	2000	Applied Physics Letters2000，77，2：	1
2	Experiments on turbulence in a rotating fluid显示文摘	IBBETSON A TRITTON D J	1975	J Fluid Mech1975，68，：	1
3	Polarization effects, surface states, and the source of electrons in AlGaN/ GaN heterostructure field effect transistors 显示文摘	IBBETSON J P FINI P T NESS K D	2000	APL2000，77，2：	1
4	Polarization effects,surface states,and the source of electrons in A1GaN/GaN heterostructure field effect transistors显示文摘	Ibbetson J P Fini P T Ness K D		0，，02：	1
5	Self-assembled ErAs islands in GaAs: Growth and subpieoseeond carrier dynamics 显示文摘	KADOW C FLEISCHER S B IBBETSON J P	1999	Appl Phys Lett1999，75，35：	1
6	Very-high power density AlGaN/GaN HEMTs显示文摘	Wu Y F Kapolnek D Ibbetson J P	2001	IEEE Electron Devices2001，48，3：	1
7	Very-high power density AlGaN/GaN HEMT 显示文摘	WU Y F KAPOLNEK D IBBETSON J P	2001	IEEE Trans Electron Devices2001，48，：	1
8	Electrical characterization of GaN p-n junctions with and without threading dislocations显示文摘	Kozodoy P Ibbetson P J Marchand H	1998	Appl Phys Lett1998，73，7：	1
9	Polarization Effects,Surface States,and the Source of Electrons in AlGaN/GaN Heterostructre Field Effect Transistors显示文摘	Ibbetson J P Fini P T Ness K D	2000	Appl Phys Lett2000，77，：	1
10	Polarization effects,surface states,and the source of electrons in AlGaN/GaN HFETs显示文摘	IBBETSON J P FINI P T NESS K D	2000	Appl Phys Lett2000，77，2：	1
11	Polarization effects,surface states,and the source of electrons in AlGaN/GaN heterostructre field effect transistors显示文摘	IBBETSON J P FINI P T NESS K D	2000	Appl Phys Lett2000，77，：	1
12	Microstructure of GaN laterally overgrown by metalorganic chemical vapor deposition显示文摘	MARCHAND H WU X H IBBETSON J P	1998	Applied Physics Letters1998，73，6：	1
13	Polarization-induced charge and electron mobility in AlGaN/GaN heterostructures grown by plasma-assisted molecular-beam epitaxy显示文摘	Smorchkova I P Elsass C R Ibbetson J P	1999	J Appl Phys1999，86，8：	1
14	Atomic force microscopy observation of threadingdislocation density reduction in lateral epitaxial overgrowth of gallium nitride by MOCVD 显示文摘	Marchand H Ibbetson J P Kozodoy P	1998	MRS lnt J Nitride Semicond Res1998，3，2：	1
15	Electrical characterization of GaN p-n junctions with and without threading dislocations显示文摘	Kozodoy P Ibbetson J P Marchand H	1998	App Phys Lett1998，73，7：	1
16	Educational needs and employment status of Scottish dental technicians显示文摘	Ross M K Ibbetson R J	2005	Br Dent J2005，，199：	1
17	查看详情显示文摘	Smorchkova I P Elsass C R Ibbetson J E Vetury R Heying B Fini P Haus E DenBaars S P Speck J S Mishra U K		0，，：	1
18	Polarization-induced Charge and Electron Mobility in AlGaN/GaN Heterostructures Grown by Plasma-assisted Molecular-beam Epitaxy显示文摘	Smorchkova I P Elsass C R Ibbetson J P	1999	J Appl Phys1999，86，8：	1
19	Polarization-induced charge and electron mobility in AlGaN/GaN heterostructures grown by plasma-assisted molecularbeam epitaxy显示文摘	SMORCHKOVA I P ELSASS C R IBBETSON J P	1999	J Appl Phys1999，86，：	1
20	显示文摘	Ibbetson J P Fini P T	1998	J Crystal Growth1998，195，：	1

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