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38篇 您的检索式：作者名="Meneghesso"

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	题名	作者	年代	出处	被引量
1	Recombination mechanisms and thermal droop in AlGaN-based UV-B LEDs显示文摘This paper reports a comprehensive analysis of the origin of the electroluminescence(EL)peaks and of the thermal droop in UV-B AlGaN-based LEDs.By carrying out spectral measurements at several temperatures and currents,(i)we extract information on the physical origin of the various spectral bands,and(ii) we develop a novel closed-form model based on the Shockley–Read–Hall theory and on the ABC rate equation that is able to reproduce the experimental data on thermal droop caused by non-radiative recombination through deep levels.In the samples under test,the three EL bands are ascribed to the following processes:band-to-band recombination in the quantum wells(main EL peak),a parasitic intra-bandgap radiative transition in the quantum well barriers,and a second defect-related radiative process in the p-AlGaN superlattice.	CARLO DE SANTI MATTEO MENEGHINI DESIREE MONTI JOHANNES GLAAB MARTIN GUTTMANN JENS RASS SVEN EINFELDT FRANK MEHNKE JOHANNES ENSLIN TIM WERNICKE MICHAEL KNEISSL GAUDENZIO MENEGHESSO ENRICO ZANONI	2017	Photonics Research2017，5，2：	2
2	Reliability of visible GaN LEDs in plastic package显示文摘	MENEGHESSO G LEVADA S ZANONI E	2003	Microelectronics Reliability2003，43，911：	1
3	Analysis of DC current accelerated life tests of GaN LEDs using a Weibull-based statistical model显示文摘	LEVADA S MENEGHINI M MENEGHESSO G	2005	Device and Materials Reliability IEEE Transactions2005，5，4：	1
4	Current collapse and high-electric-field reliability of unpassivated GaN/AlGaN/GaN HEMTs显示文摘	MENEGHESSO G RAMPAZZO F KORDOS P	2006	IEEE Trans Electron Devices2006，53，12：	1
5	Surface-related drain current dispersion effects in AlGaN-GaN HEMTs显示文摘	Meneghesso G Verzellesi G Pierobon R	2004	IEEE Trans Elec Dev2004，51，10：	1
6	Reliability analysis of GaN-Based LEDs for solid state illumination显示文摘	MENEGHESSO G LEVADA S PIEROBON R	2003	IEICE Trans Electron2003，86，：	1
7	Sur- face-related drain current dispersion effects in AIGaN- GaN HEMTs显示文摘	Meneghesso G Verzellesi G Pierobon R	2004	IEEE Electron Devices2004，51，10：	1
8	Cur- rent collapse and high-electric-field reliability of unpas- sivated GaN/A1GaN/GaN HEMTs显示文摘	Meneghesso G Rampazzo F Kord6s P	2006	IEEE Electron Devices2006，53，12：	1
9	Surface-related drain current dispersion effects in AlGaN- GaN HEMTs 显示文摘	Meneghesso G Verzellesi G Pierobon R	2004	IEEE Trans Electron Devices2004，51，10：	1
10	Systematic characterization of C12 reactive ionetching for im- proved ohmics in AIGaN/GaN HEMTs 显示文摘	Buttari D Chini A Meneghesso G	2002	IEEE Electron Device Lett2002，23，2：	1
11	High-temperature failure of GaN LEDs related with Passivation显示文摘	Matteo Meneghini Lorenzo Trevisanello Gaudenzio Meneghesso	2006	Superlattices and Microstructures2006，40，：	1
12	Sur- face-related drain current dispersion effects in AIGaN-GaN HEMTs显示文摘	Meneghesso G Verzellesi G Pierobon R	2004	IEEE Electron Devices2004，51，10：	1
13	Failure mechanisms of AlGaAs/InGaAs pseudomorphic HEMT′s:effects due to hot electrons and modulation of trapped charge显示文摘	Meneghesso G Levada S Zanoni E	1997	Microelectronics Reliability1997，37，：	1
14	Investigation on ESD-stressed GaN/InGaN-on-sapphire blue LED显示文摘	Meneghesso G Podda S Vanzi M	2001	Microelection Reliab2001，41，5：	1
15	Areview on the reliability of GaN-based LEDs 显示文摘	MENEGHIN1 M TREVISANELLO L R MENEGHESSO C	2008	IEEE Trans ations on l)eviee and MaterialsReliability2008，8，2：	1
16	Investigation on ESD-stressed GaN/lnGaN-on-sapphire blue LEDs 显示文摘	MENEGHESSO G PODDA S VANZI M	2001	Microelectronics Reliability2001，41，910：	1
17	Recent results on the degradation of white LEDs for lighting 显示文摘	Meneghesso G Meneghini M Zanoni E	2010	Journal of Physics D: Applied Physics2010，43，35：	1
18	Reliability of visible GaN LEDs in plastic package 显示文摘	MENEGHESSO G LEVADA S ZANONI E	2003	Micmelectmnics Reliability2003，43，9：	1
19	Acombined electro-optical method for the determination of the recombination parameters in In Ga N-based light-emitting diodes显示文摘	M Meneghini N Trivellin G Meneghesso	2009	Journal of Applied Physics2009，106，11：	1
20	Investigation of High-electric-field Degradation Effects in Al- GaN/GaN HEMTs显示文摘	FAGIR M VERZELLESI G MENEGHESSO G	2008	IEEE ED2008，55，7：	1

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