| 1 | Evaluating the effect of dislocation on the photovoltaic performance of metamorphic tandem solar cells显示文摘The photovoltaic conversion efficiency for monolithic GaInP/GaInAs/Ge triple-junction cell with various bandgap combination (300 suns,AM1.5d) was theoretically calculated.An impressive improvement on conversion efficiency was observed for a bandgap combination of 1.708,1.194,and 0.67 eV.A theoretical investigation was carried out on the effect of dislocation on the metamorphic structure’s efficiency by regarding dislocation as minority-carrier recombination center.The results showed that only when dislocation density was less than 1.6×106 cm-2,can this metamorphic combination exhibit its efficiency advantage over the fully-matched combination.In addition,we also briefly evaluated the lattice misfit dependence of the dislocation density for a group of metamorphic triple-junction system,and used it as guidance for the choice of the proper cell structure. | ZHANG Han1,CHEN NuoFu2,3,WANG Yu1,ZHANG XingWang1,YIN ZhiGang1,SHI HuiWei1,WANG YanSuo1,HUANG TianMao1,BAI YiMing2 & FU Zhen11 Key Laboratory of Semiconductor Materials Science,Institute of Semiconductors,Chinese Academy of Sciences,P.O.Box 912,Beijing 100083,China 2 School of Renewable Energy Engineering,North China Electric Power University,Beijing 102206,China 3 State Key Laboratory of Silicon Materials,Zhejiang University,Hangzhou 310027,China | 2010 | Science China(Technological Sciences)2010，53，9： | 4 |
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