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| 1 | Preface显示文摘Wide bandgap semiconductors play more and more important roles in both scientific researches and industrial applications.The unique wide bandgap properties provide a platform for flexible functional design for crystal growth,defect engineering,interface engineering,and device construction.Meanwhile,the underlying physical | Shuyan Guo Weijun Ling Hao Teng Wei Zhang Lifeng Wang Zhiyi Wei | 2014 | Chinese Science Bulletin2014，59，12： | 4 |
| 2 | Different structural origins for different sized surface pits observed on a-plane GaN film显示文摘A correlation study between the observed surface morphology using high-resolution scanning electron microscopy(HRSEM) and the observed structural imperfections using transmission electron microscopy(TEM) has been conducted for a-plane Ga N. There are three different sized asymmetric surface pits: large pit of 500 nm–2 ?m in side length, medium pit of 50 nm in side length, and small pit with side lengths of less than 5 nm, which originate from incomplete island coalescence, screw dislocation, and partial dislocation(PD), respectively. Both screw dislocation and PD can produce pits on the free surface because they have a perpendicular line tension to the surface, which must remain in balance with the surface tension. The two types of dislocation lead to distinctive pit sizes because the PD has a smaller Burgers vector component along the dislocation line than the pure screw dislocation. A pit that is produced in the island-coalescing process is much larger than those caused by dislocations because island coalescence is a kinetic process that involves large-scale mass transportation, whereas the dislocation mediates the surface in the local area. These three types of surface pits sometimes interact with one another in space. The coalescence of the island determines the surface morphology at large scales, whereas the defects affect the details. | GAO ZhiYuan LI JiangJiang XUE XiaoWei CUI BiFeng XING YanHui ZOU DeShu | 2016 | Science China(Technological Sciences)2016，59，1： | 1 |
| 3 | LED制备中剥离技术的研究进展显示文摘随着LED芯片功率的增加,结温升高导致传统LED芯片的可靠性和使用寿命明显下降。介绍了LED芯片的研究背景,指出散热问题是制约LED芯片发展的重要因素,因此研发可靠性高的散热技术已成为制备新型LED芯片的重要研究方向。详细论述了三种剥离技术在制备新型LED芯片中所起的重要作用及目前的技术水平。激光剥离技术剥离速度快、发展相对成熟;化学剥离技术对GaN薄膜损伤小、良率高、但剥离速度慢;机械剥离技术良率低,在LED领域应用较少。从工业化生产的角度指出了剥离技术未来的发展方向。 | 周朝旭 罗超 张保国 王静辉 甄珍珍 李晓波 潘柏臣 | 2016 | 微纳电子技术2016，53，12： | 1 |
| 4 | 半导体物理的通识教研初探——异质外延GaN晶体中缺陷的艺术形象显示文摘从异质外延GaN薄膜中缺陷的形成机理出发,通过湿法腐蚀GaN和扫描电子显微镜(SEM)观察的方法,主要从美学中的形式美、意象美和功能美三个方面,针对异质外延生长的GaN薄膜中缺陷的艺术形象进行了分析,其目的是有意识地提炼学科中的科学美,唤起学生探索的兴趣和积极性,为自然科学通识教育课程内容设置提供一些具体的、可操作的构想。 | 曹路明 高志远 崔碧峰 | 2019 | 现代职业教育2019，0，34： | 0 |
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