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| 1 | Recent progress of integrated circuits and optoelectronic chips显示文摘Integrated circuits(ICs)and optoelectronic chips are the foundation stones of the modern information society.The IC industry has been driven by the so-called'Moore's law'in the past 60 years,and now has entered the post Moore's law era.In this paper,we review the recent progress of ICs and optoelectronic chips.The research status,technical challenges and development trend of devices,chips and integrated technologies of typical IC and optoelectronic chips are focused on.The main contents include the development law of IC and optoelectronic chip technology,the IC design and processing technology,emerging memory and chip architecture,brain-like chip structure and its mechanism,heterogeneous integration,quantum chip technology,silicon photonics chip technology,integrated microwave photonic chip,and optoelectronic hybrid integrated chip. | Yue HAO Shuiying XIANG Genquan HAN Jincheng ZHANG Xiaohua MA Zhangming ZHU Xingxing GUO Yahui ZHANG Yanan HAN Ziwei SONG Yan LIU Ling YANG Hong ZHOU Jiangyi SHI Wei ZHANG Min XU Weisheng ZHAO Biao PAN Yangqi HUANG Qi LIU Yimao CAI Jian ZHU Xin OU Tiangui YOU Huaqiang WU Bin GAO Zhiyong ZHANG Guoping GUO Yonghua CHEN Yong LIU Xiangfei CHEN Chunlai XUE Xingjun WANG Lixia ZHAO Xihua ZOU Lianshan YAN Ming LI | 2021 | Science China(Information Sciences)2021，64，10： | 7 |
| 2 | β-Ga_(2)O_(3)(010)表面对新型环保绝缘气体CF_(3)SO_(2)F的气敏响应特性显示文摘CF_(3)SO_(2)F作为一种新型的环保绝缘气体,有望取代绝缘气体SF_(6)。考虑到CF_(3)SO_(2)F的生物毒性,开发用于泄漏检测的高灵敏度传感器具有重要的工程意义。为此,基于第一性原理,计算分析了本征β-Ga_(2)O_(3)(010)表面对CF_(3)SO_(2)F的气敏响应特性以及氧空位缺陷对CF_(3)SO_(2)F在β-Ga_(2)O_(3)(010)表面吸附性质的影响。CF_(3)SO_(2)F吸附前后,本征β-Ga_(2)O_(3)(010)表面吸附体系的功函数发生了显著变化,且室温下的恢复时间短。此外,环境分子O_(2)和CO_(2)的存在并不影响本征β-Ga_(2)O_(3)(010)表面对CF_(3)SO_(2)F的选择性检测。因此,本征β-Ga_(2)O_(3)(010)表面可作为CF_(3)SO_(2)F潜在的场效应晶体管型气敏器件材料,且该器件具有较高的稳定性,良好的选择性,较高的灵敏度和可重复利用性。氧空位缺陷的引入使β-Ga_(2)O_(3)(010)表面吸附体系在环境分子O_(2)和CO_(2)存在的情况下无法对CF_(3)SO_(2)F气体进行选择性检测。因此,在β-Ga_(2)O_(3)(010)表面材料的合成过程中应尽可能避免氧空位缺陷的存在。论文从理论上证明了本征β-Ga_(2)O_(3)(010)表面可作为一种潜在的CF_(3)SO_(2)F场效应晶体管型气敏材料,对后续的实验制备气敏传感器具有指导作用。 | 韩蓉 郭宇铮 高克利 周文俊 郑宇 | 2023 | 高电压技术2023，49，3： | 2 |
| 3 | SiO_(2)/SiC界面工艺技术研究现状及新进展显示文摘从SiO_(2)/SiC界面工艺技术角度着重介绍了其降低界面态密度、提升沟道电子迁移率及改善SiC MOSFET性能稳定性的机理,分析了国内外研究中有关SiC材料、SiC晶面、氧化层制备工艺和氧化后退火(POA)条件对SiO_(2)/SiC界面的影响,总结了近年来提升SiO_(2)/SiC界面性能的研究进展。最后分析了多种降低界面态密度的工艺方法及其优缺点,指出了未来通过结合这些工艺方法进一步改善界面质量的发展方向。 | 刘佳霖 刘英坤 | 2022 | 半导体技术2022，47，5： | 2 |
| 4 | β-Ga_(2)O_(3)晶体金刚石线锯切割的表面质量研究显示文摘本文探究了往复式金刚石线锯的工艺参数对β-Ga_(2)O_(3)单晶沿(001)晶面切片时表面质量的影响,从压痕断裂力学理论角度探究了金刚石线锯切割β-Ga_(2)O_(3)单晶过程中磨粒行为和材料去除机理。实验从各向异性角度分析了切割方向对(001)面β-Ga_(2)O_(3)单晶切割片表面质量的影响,并采用SEM和SJ-210粗糙度测试仪探究了工艺参数对金刚石线锯切割后的晶片表面质量的影响。实验结果表明,增大锯丝速度或减小材料进给速度都能降低亚表面损伤层深度及表面粗糙度,有效改善晶片表面质量。 | 李晖 高鹏程 程红娟 王英民 高飞 张弛 王磊 | 2022 | 人工晶体学报2022，51，12： | 1 |
| 5 | High-performance junction field-effect transistor based on black phosphorus/β-Ga2O3 heterostructure显示文摘Black phosphorous(BP),an excellent two-dimensional(2D)monoelemental layered p-type semiconductor material with high carrier mobility and thickness-dependent tunable direct bandgap structure,has been widely applied in various devices.As the essential building blocks for modern electronic and optoelectronic devices,high quality PN junctions based on semiconductors have attracted widespread attention.Herein,we report a junction field-effect transistor(JFET)by integrating narrow-gap p-type BP and ultra-wide gap n-typeβ-Ga2O3 nanoflakes for the first time.BP andβ-Ga2O3 form a vertical van der Waals(vdW)heterostructure by mechanically exfoliated method.The BP/β-Ga2O3 vdW heterostructure exhibits remarkable PN diode rectifying characteristics with a high rectifying ratio about 107 and a low reverse current around pA.More interestingly,by using the BP as the gate andβ-Ga2O3 as the channel,the BP/β-Ga2O3 JFET devices demonstrate excellent n-channel JFET characteristics with the on/off ratio as high as 107,gate leakage current around as low as pA,maximum transconductance(gm)up to 25.3μS and saturation drain current(IDSS)of 16.5μA/μm.Moreover,it has a pinch-off voltage of–20 V and a minimum subthreshold swing of 260 mV/dec.These excellent n-channel JFET characteristics will expand the application of BP in future nanoelectronic devices. | Chang Li Cheng Chen Jie Chen Tao He Hongwei Li Zeyuan Yang Liu Xie Zhongchang Wang Kai Zhang | 2020 | Journal of Semiconductors2020，41，8： | 1 |
| 6 | 基于Ga2O3的场效应器件研究进展显示文摘氧化镓(Ga2O3)作为第三代宽禁带半导体材料,由于其超宽带隙、高击穿场强以及高巴利加优值等优点,广泛应用于大功率器件等领域,已成为近几年来国内外科研人员研究的热点。主要介绍了Ga2O3材料的特性,总结了基于Ga2O3的场效应晶体管(FET)的研究进展,对Ga2O3功率器件的发展进行了思考归纳。 | 高灿灿 马奎 杨发顺 | 2020 | 电子技术应用2020，46，5： | 1 |
| 7 | Ga_(2)O_(3)真空碳热还原实验研究显示文摘本文研究了Ga_(2)O_(3)真空碳热还原过程中还原温度、C:Ga_(2)O_(3)、保温时间对实验结果的影响。研究结果表明:在还原温度1323 K、C:Ga_(2)O_(3)(摩尔比)为4、保温时间150 min的最佳实验条件下,冷凝物以均匀颗粒状富集在冷凝盖上,Ga_(2)O_(3)还原率为68.19%,还原产物冷凝收得率为59.37%,冷凝物物相为金属镓和少量歧化反应生成的Ga_(2)O_(3),金属镓在冷凝过程得到充分富集,且与Ga_(2)O_(3)良好分离。 | 陈浩林 谢克强 张燕 梁可 杨坤 高亮 符德正 | 2023 | 真空科学与技术学报2023，43，1： | 0 |
| 8 | Subsurface damage pattern and formation mechanism of monocrystalline β-Ga_(2)O_(3) in grinding process显示文摘Monocrystalline beta-phase gallium oxide (β-Ga_(2)O_(3)) is a promising ultrawide bandgap semiconductor material. However, the deformation mechanism in ultraprecision machining has not yet been revealed. The aim of this study is to investigate the damage pattern and formation mechanism of monocrystalline β-Ga_(2)O_(3)in different grinding processes. Transmission electron microscopy was used to observe the subsurface damage in rough, fine, and ultrafine grinding processes. Nanocrystals and stacking faults existed in all three processes, dislocations and twins were observed in the rough and fine grinding processes, cracks were also observed in the rough grinding process, and amorphous phase were only present in the ultrafine grinding process. The subsurface damage thickness of the samples decreased with the reduction in the grit radius and the grit depth of cut. Subsurface damage models for grinding process were established on the basis of the grinding principle, revealing the mechanism of the mechanical effect of grits on the damage pattern. The formation of nanocrystals and amorphous phase was related to the grinding conditions and material characteristics. It is important to investigate the ultraprecision grinding process of monocrystalline β-Ga_(2)O_(3). The results in this work are supposed to provide guidance for the damage control of monocrystalline β-Ga_(2)O_(3)grinding process. | Xin YANG Renke KANG Shang GAO Zihe WU Xianglong ZHU | 2022 | Frontiers of Mechanical Engineering2022，17，2： | 0 |
| 9 | 氧分压对脉冲激光沉积β-Ga_(2)O_(3−δ)薄膜光学性能的影响显示文摘在不同氧分压下,用脉冲激光沉积法在c-蓝宝石衬底上制备了高质量β-Ga_(2)O_(3−δ)薄膜。通过X-射线衍射、远红外反射光谱、X-射线光电子能谱和紫外-可见-近红外透射光谱系统地研究了β-Ga_(2)O_(3−δ)薄膜的晶格结构、化学计量比和光学性质。X-射线衍射分析表明,所有沉积的薄膜以(-201)晶向方向生长。透射光谱显示薄膜在255 nm以上的紫外-可见-近红外波段具有80%以上的高透明度,同时在255 nm附近有一个陡峭的吸收边。此外,利用Tauc-Lorentz(TL)色散函数模型和Tauc公式,我们提取了β-Ga_(2)O_(3−δ)薄膜的光学常数和光学直接带隙。更进一步,我们通过理论计算解释了氧气分压对β-Ga_(2)O_(3−δ)薄膜光学性质的影响。 | 李留猛 周斌 高立宸 姜凯 朱亮清 张金中 胡志高 褚君浩 | 2022 | 红外与毫米波学报2022，41，1： | 0 |
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