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| 1 | WSe2 2D p-type semiconductor-based electronic devices for information technology:Design,preparation,and applications显示文摘The pioneering exfoliation of monolayer tungsten diselenide has greatly inspired researchers toward semiconducting applications.WSe2 belongs to a family of transition-metal dichalcogenides.Similar to graphene,WSe2 and analogous dichalcogenides have layered structures with weak van der Waals interactions between two adjacent layers.First,the readers are presented with the fundamentals of WSe2,such as types,morphologies,and properties.Here,we report the characterization principles and practices such as microscopy,spectroscopy,and diffraction.Second,the methods for obtaining high-quality WSe2,such as exfoliation,hydrothermal and chemical vapor deposition,are briefly listed.With advantages of light weight,flexibility,and high quantum efficiency,2D materials may have a niche in optoelectronics as building blocks in p-n junctions.Therefore,we introduce a state-of-the-art demonstration of heterostructure devices employing the p-type WSe2 semiconductor.The device architectures include field-effect transistors,photodetectors,gas sensors,and photovoltaic solar cells.Due to its unique electronic,optical,and energy band properties,WSe2 has been increasingly investigated due to the conductivity of the p-type charge carrier upon palladium contact.Eventually,the dynamic research on WSe2 and van der Waals heterostructures is summarized to arouse the passion of the 2D research community. | Qilin Cheng Jinbo Pang Dehui Sun Jingang Wang Shu Zhang Fan Liu Yuke Chen Ruiqi Yang Na Liang Xiheng Lu Yanchen Ji Jian Wang Congcong Zhang Yuanhua Sang Hong Liu Weijia Zhou | 2020 | InfoMat2020，2，4： | 5 |
| 2 | 石墨烯与TMDCs缺陷工程的研究进展显示文摘晶体缺陷是晶体中的常见现象,它的存在会改变晶体局部的周期性排列,从而对晶体的力学性质、电学性质等产生影响。在石墨烯和二维过渡金属硫族化合物这两种典型的二维材料中,缺陷的作用尤为显著,如何利用缺陷工程实现对石墨烯和TMDCs性质的调节并设计可控的功能化应用已经成为该领域中的核心问题。本文基于成熟的研究结果,同时也结合了近些年最新的一些研究进展,全面地介绍了几种在石墨烯和TMDCs中常见的缺陷。文章的介绍阐明了缺陷对石墨烯和TMDCs性质的重要影响,同时也体现出了缺陷工程对于实现石墨烯与TMDCs功能化应用的关键意义。 | 周而广 | 2019 | 中国金属通报2019，，7： | 1 |
| 3 | Spintronics in Two-Dimensional Materials显示文摘Spintronics,exploiting the spin degree of electrons as the information vector,is an attractive field for implementing the beyond Complemetary metal-oxide-semiconductor(CMOS)devices.Recently,two-dimensional(2D)materials have been drawing tremendous attention in spintronics owing to their distinctive spin-dependent properties,such as the ultralong spin relaxation time of graphene and the spin-valley locking of transition metal dichalcogenides.Moreover,the related heterostructures provide an unprecedented probability of combining the di erent characteristics via proximity e ect,which could remedy the limitation of individual 2D materials.Hence,the proximity engineering has been growing extremely fast and has made significant achievements in the spin injection and manipulation.Nevertheless,there are still challenges toward practical application;for example,the mechanism of spin relaxation in 2D materials is unclear,and the high-effciency spin gating is not yet achieved.In this review,we focus on 2D materials and related heterostructures to systematically summarize the progress of the spin injection,transport,manipulation,and application for information storage and processing.We also highlight the current challenges and future perspectives on the studies of spintronic devices based on 2D materials. | Yanping Liu Cheng Zeng Jiahong Zhong Junnan Ding Zhiming MWang Zongwen Liu | 2020 | Nano-Micro Letters2020，12，7： | 1 |
| 4 | Valley dynamics of different excitonic states in monolayer WSe_(2)grown by molecular beam epitaxy显示文摘Monolayer transition-metal dichalcogenides possess rich excitonic physics and unique valley-contrasting optical selection rule,and offer a great platform for long spin/valley lifetime engineering and the associated spin/valleytronics exploration.Using two-color time-resolved Kerr rotation and time-resolved reflectivity spectroscopy,we investigate the spin/valley dynamics of different excitonic states in monolayer WSe_(2)grown by molecular beam epitaxy.With fine tuning of the photon energy of both pump and probe beams,the valley relaxation process for the neutral excitons and trions is found to be remarkably different-their characteristic spin/valley lifetimes vary from picoseconds to nanoseconds,respectively.The observed long trion spin lifetime of>2.0 ns is discussed to be associated with the dark trion states,which is evidenced by the photon-energy dependent valley polarization relaxation.Our results also reveal that valley depolarization for these different excitonic states is intimately connected with the strong Coulomb interaction when the optical excitation energy is above the exciton resonance. | Shengmin Hu Jialiang Ye Ruiqi Liu Xinhui Zhang | 2022 | Journal of Semiconductors2022，43，8： | 0 |
| 5 | Photoluminescence manipulation in two-dimensional transition metal dichalcogenides显示文摘Two-dimensional transition metal dichalcogenides(TMDCs)have been regarded as an intriguing platform for exploring novel physical phenomena and optoelectronic devices due to their excitonic emission characteristics derived from the atomic thin thickness and reduced dielectric screening effect.Notably,monolayer TMDCs with a direct bandgap exhibiting strong photoluminescence(PL)are promising candidates for the light-emitting devices,while the interlayer excitons in heterostructures hold great potential for the photonic chips and optical communication applications.However,the non-ideal photoluminescent intensity and quality due to the ultrathin thickness and high defect density of experimentally obtained monolayer TMDCs limit the further development for the light-emission applications.Here,we summarize the research progress on the PL manipulation of the excitonic emission in TMDCs,where the PL intensity enhancement and emission wavelength regulation are included.The concept and characteristics of excitons are overviewed firstly,followed by the discussion on the evaluation and characterization of excitonic emission.The state-of-the-art progress on the manipulation of the neutral excitons and interlayer excitons PL are then summarized.Finally,the challenges and prospects are proposed. | Minglang Gao Lingxiao Yu Qian Lv Feiyu Kang Zheng-Hong Huang Ruitao Lv | 2023 | Journal of Materiomics2023，9，4： | 0 |
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