Improvement in the intense pulsed emission stability of grown CNT films via an electroless plated Ni layer

查看全文 作　　者：ZENG [1]FanGuang;LI [2]Xin;LIU [2]WeiHua;QIAO [1]ShuZhen;MA [1]HuaLi;ZHANG [1]Rui;XIA [3]LianSheng;CHEN [3]Yi;LIU [1]XingGuang;ZHANG [3]Huang

机构地区：[1]Department of Mathematics and Physics, Zhengzhou Institute of Aeronautical Industry Management, Zhengzhou 450015, China;[2]School of Electronic and Information Engineering, Xi'an Jiaotong University, Xi'an 710049, China;[3]Institute of Fluid Physics, Chinese Academy of Engineering Physics, Mianyang 621900, China

出　　处：《Chinese Science Bulletin》索引2011年第56卷第22期,共4页

基　　金：supported by the National Natural Science Foundation of China(51072184,50972132,51002143 and 60801022);the Aeronautical Science Foundation of China(2009ZE55003 and 2010ZF55013);the Basic and Advanced Technology Program of Henan(092300410139) 摘　　要：Carbon nanotube(CNT)films were grown on silicon wafers with and without a nickel layer(Si-CNT and Ni-CNT)via the pyrolysis of iron phthalocyanine.The nickel layer was prepared using the electroless plating method.To study the emission stability of Si-CNT and Ni-CNT cathodes during intense pulsed emission,emission characteristics were measured repeatedly with a diode structure using a Marx generator as a voltage source.For the peak values of the pulsed voltage,which were in the range between 1.62-1.66 MV(corresponding to electric field intensities between 11.57-11.85 V/μm),the first cycle emission current was 109.4 A for Si-CNT and 180.5 A for Ni-CNT.By comparing the normalized emission currents of the Si-CNT and Ni-CNT cathodes,the improvement in the emission stability can be easily quantified.The number of emission cycles necessary for the peak current to decay from 100%to 50%increased from^3 for Si-CNT to^11 for a Ni-CNT film. 关键词：碳纳米管薄膜化学镀镍层发射电流稳定性强脉冲生长碳纳米管阴极 MARX发生器

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Improvement in the intense pulsed emission stability of grown CNT films via an electroless plated Ni layer

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