Optical and photo-carrier characterization of ultra-shallow junctions in silicon

查看全文 作　　者：HUANG [1,2]QiuPing;LI [1]BinCheng;REN [1,2]ShengDong

机构地区：[1]Institute of Optics and Electronics,Chinese Academy of Sciences;[2]University of Chinese Academy of Sciences

出　　处：《Science China(Physics,Mechanics & Astronomy)》索引2013年第56卷第7期,共7页

基　　金：supported by the National Natural Science Foundation of China(Grant Nos. 61076090 and 60676058) 摘　　要：Spectroscopic ellipsometry (SE), photocarrier radiometry (PCR) and photoluminescence (PL) techniques were employed to measure the ultra-shallow junction (USJ) wafers. These USJ wafers were prepared by As+ ion implantation at energies of 0.5-5 keV, at a dose of 1×1015 As+ /cm 2 and spike annealing. Experimentally the damaged layer of the as-implanted wafer and the recrystallization and activation of the post-annealed wafer were evaluated by SE in the spectral range from 0.27 to 20 m. The PCR amplitude decreased monotonically with the increasing implantation energy. The experimental results also showed that the PCR amplitudes of post-annealed USJ wafers were greatly enhanced, compared to the non-implanted and non-annealed substrate wafer. The PL measurements showed the enhanced PCR signals were attributed to the band-edge emissions of silicon. For explaining the PL enhancement, the electronic transport properties of USJ wafers were extracted via multi-wavelength PCR experiment and fitting. The fitted results showed the decreasing surface recombination velocity and the decreasing diffusion coefficient of the implanted layer contributed to the PCR signal enhancement with the decreasing implantation energy. SE, PCR and PL were proven to be non-destructive metrology tools for characterizing ultra-shallow junctions. 关键词：光生载流子超浅结表征电子输运性质长PCR 光学注入能量表面复合速度

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Optical and photo-carrier characterization of ultra-shallow junctions in silicon

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