Infuence of Substrate Temperature on Stress and Morphology Characteristics of Co Doped ZnO Films Prepared by Laser-Molecular Beam Epitaxy

查看全文 作　　者：Yunyan [1]Liu;Shanying [2]Yang;Gongxiang [1]Wei;Jiaoqing [3]Pan;Yuzhen [1]Yuan;Chuanfu [4]Cheng

机构地区：[1]School of Science,Shandong University of Technology;[2]Laiwu Vocational and Technical College;[3]Key Laboratory of Semiconductor Materials Science,Institute of Semiconductors,Chinese Academy of Sciences;[4]College of Physics and Electronics,Shandong Normal University

出　　处：《Journal of Materials Science & Technology》索引2013年第29卷第12期,共5页

基　　金：support from the National Natural Science Foundation of China under Grant No.10974122;Shandong Provincial Natural Science Foundation under Grant No.ZR2009FZ006;support of Open Project Foundation under Grant No.KLSMS-1005 and No.KLSMS-0908 from Key Laboratory of Semiconductor Materials Science of Chinese Academy of Sciences 摘　　要：Zn1exCox O(x 0.05) thin films are deposited on sapphire(0001) substrates by laser-molecular beam epitaxy technique at different substrate temperatures. The structural, stress and morphology evolution features are investigated by means of X-ray diffraction and atomic force microscopy. The surface parameters of roughness exponent a, root mean square(RMS) roughness w and autocorrelation length x are calculated and the surface parameters are preliminarily analyzed. The values of a vary from 0.7 to 0.9. The RMS roughness w is less than 2.2 nm, and it increases with increasing T s from 300 to 400 C, and then decreases when T s is 500 C. The autocorrelation length x decreases monotonously with the increase in T s from 300 to 500 C, which indicates that the increase in T s restrains the spread of the surface fluctuations until T s is higher than 400 C. 关键词：ZnO薄膜衬底温度分子束外延法应力和激光原子力显微镜方法粗糙度指数分子束外延技术

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Infuence of Substrate Temperature on Stress and Morphology Characteristics of Co Doped ZnO Films Prepared by Laser-Molecular Beam Epitaxy

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