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Research progress in ZnO single-crystal:growth, scientific understanding, and device applications

查看全文 作　　者：Feng [1]Huang;Zhang [2]Lin;Wenwen [1]Lin;Jiye [1]Zhang;Kai [1]Ding;Yonghao [1]Wang;Qinghong [1]Zheng;Zhibing [1]Zhan;Fengbo [1]Yan;Dagui [1]Chen;Peiwen [1]Lv;Xian [1]Wang 高影响力作者 机构地区：[1]Key Laboratory of Optoelectronic Materials Chemistry and Physics,Fujian Institute of Research on the Structure of Matter(FJIRSM),Chinese Academy of Sciences;[2]State Key Laboratory of Structural Chemistry,Fujian Institute of Research on the Structure of Matter(FJIRSM),Chinese Academy of Sciences高影响力机构 出　　处：《Chinese Science Bulletin》索引2014年第59卷第12期,共16页高影响力期刊 基　　金：supported by the National Natural Science Foundation of China(60736032,20971123,51002153,21007070,51102232,61106004 and 21103191);the National Basic Research Program of China(2007CB936703);the Knowledge Innovation Program of the Chinese Academy of Sciences(KJC2.YW.317,KJC2.YW.W01);the Fujian Natural Science Foundation of China(2005HZ1023,2006F3140,2007F3113,2007HZ0005-3,2010J01054,2010J06006,2010J05038 and 2012J05033);the China NationalFunds for Distinguished Young Scientists(50625205) 摘　　要：Zinc oxide,a wide band-gap semiconductor,has shown extensive potential applications in high-efficiency semiconductor photoelectronic devices,semiconductor photocatalysis,and diluted magnetic semiconductors.Due to the undisputed lattice integrity,ZnO single crystals are essential for the fabrication of high-quality ZnO-based photoelectronic devices,and also believed to be ideal research subjects for understanding the underlying mechanisms of semiconductor photocatalysis and diluted magnetic semiconductors.This review,which is organized in two main parts,introduces the recent progress in growth,basic characterization,and device development of ZnO single crystals,and some related works in our group.The first part begins from the growth of ZnO single crystal,and summarizes the fundamental and applied investigations based on ZnO single crystals.These works are composed of the fabrication of homoepitaxial ZnO-based photoelectronic devices,the research on the photocatalysis mechanism,and dilute magnetic mechanism.The second part describes the fabrication of highly thermostable n-type ZnO with high mobility and high electron concentration through intentional doping.More importantly,in this part,a conceptual approach for fabricating highly thermostable p-type ZnO materials with high mobility through an integrated three-step treatment is proposed on the basis of the preliminary research. 关 键 词：器件应用 氧化锌 科学认识 半导体光电器件 ZNO单晶 半导体光催化 稀释磁性半导体 宽带隙半导体
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