Doping profile modification approach of the optimization of HfO_x based resistive switching device by inserting AlO_x layer

查看全文 作　　者：HOU [1]Yi;CHEN [1]Bing;CHEN [1]Zhe;ZHANG [1]FeiFei;LIU [1]LiFeng;KANG [1]JinFeng;CHENG [1]YuHua

机构地区：[1]Institute of Microelectronics, Peking University

出　　处：《Science China(Information Sciences)》索引2015年第58卷第6期,共7页

基　　金：supported by National Basic Research Program of China(973 Program)(Grant No.2011CBA00600);National National Science Foundation of China(Grant Nos.61376084,61421005,61334007);National Science and Technology Major Project(Grant No.2011ZX02708) 摘　　要：Hf Ox based resistive switching devices with thin Al Ox layer inserted between Hf Ox and Ti N top electrode(TE) and Pt bottom electrode(BE) were fabricated respectively. Both devices show robust bipolar resistive switching phenomenon. Experimental result reveals that Ti N/Al Ox/Hf Ox/Pt device with appropriately thick Hf Ox film shows significant enhancement in performance as compared with other samples, having lower voltage and excellent uniformity. The role of inserted Al Ox layer and thickness of Hf Ox film on resistive switching properties are discussed and clarified through comparative experiments, which is considered to be a doping effect. The experimental result is consistent with the model where resistive switching happens near Ti N top electrode(TE) due to partial rupture and reconstruction of conducting filaments(CFs) assisted by the doping. The different doping profiles near top electrode of the samples were confirmed by XPS depth analysis.This work provides detailed information about the optimization of Hf Ox based resistive switching device by a doping profile modification approach. 关键词：掺杂分布开关装置修改方法中电阻包覆层配置文件优化对比实验

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Doping profile modification approach of the optimization of HfO_x based resistive switching device by inserting AlO_x layer

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