Temperature dependent Raman and photoluminescence of vertical WS2/MoS2 monolayer heterostructures

查看全文 作　　者：Zhijian [2]Hu;Yanjun [1]Bao;Ziwei [1]Li;Yongji [3]Gong;Rui [1]Feng;Yingdong [1]Xiao;Xiaochun [2]Wu;Zhaohui [1]Zhang;Xing [1,2]Zhu;Pulickel M. [3]Ajayan;Zheyu [1]Fang

机构地区：[1]State Key Laboratory for Mesoscopic Physics,School of Physics,Peking University,Collaborative Innovation Center of Quantum Matter,Beijing 100871,China;[2]Key Laboratory of Nanoscale Measurement and Standardization National Center for Nanoscience and Technology,Beijing 100190,China;[3]Department of Materials Science and NanoEngineering,Rice University,Houston,7X 77005,USA

出　　处：《Science Bulletin》索引2017年第62卷第1期,共6页

基　　金：supported by the National Basic Research Program of China (2015CB932403);the National Natural Science Foundation of China (11674012, 61422501, 11374023, 11304054 and 61521004);Beijing Natural Science Foundation (L140007);Foundation for the Author of National Excellent Doctoral Dissertation of China (201420);National Program for Support of Top-notch Young Professionals 摘　　要：Heterostructures from two-dimensional transition-metal dichalcogenides MX_2 have emerged as a hot topic in recent years due to their various fascinating properties. Here, we investigated the temperature dependent Raman and photoluminescence(PL) spectra in vertical stacked WS_2/MoS_2 monolayer heterostructures. Our result shows that both E_(2g)~1 and A_(1g) modes of WS_2 and MoS_2 vary linearly with temperature increasing from 300 to 642 K. The PL measurement also reveals strong temperature dependencies of the PL intensity and peak position. The activation energy of the thermal quenching of the PL emission has been found to be equal to 69.6 meV. The temperature dependence of the peak energy well follows the bandgap shrinkage of bulk semiconductor. 关键词：温度依赖性异质结构 MOS2 光致发光拉曼光谱垂直单层 WSE

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Temperature dependent Raman and photoluminescence of vertical WS2/MoS2 monolayer heterostructures

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