Ultra-low V_(pp)and high-modulation-depth InP-based electro-optic microring modulator

查看全文 作　　者：Dapeng [1,2]Liu;Jian [1,2]Tang;Yao [1,2]Meng;Wei [1,2]Li;Ninghua [1,2]Zhu;Ming [1,2]Li

机构地区：[1]State Key Laboratory of Integrated Optoelectronics,Institute of Semiconductors,Chinese Academy of Sciences,Beijing 100083,China;[2]School of Electronic,Electrical and Communication Engineering,University of Chinese Academy of Science,Beijing 100049,China

出　　处：《Journal of Semiconductors》索引2021年第42卷第8期,共5页

基　　金：supported by the National Natural Science Foundation of China(61535012,61925505);the National Key R&D Program of China(2018YFB2201900)。 摘　　要：A modulator is an essential building block in the integrated photonics,connecting the electrical with optical signals.The microring modulator gains much attention because of the small footprint,low drive voltage and high extinction ratio.An ultra-low V_(pp)and high-modulation-depth indium phosphide-based racetrack microring modulator is demonstrated in this paper.The proposed device mainly comprises one racetrack microring,incorporating a semiconductor amplifier,and coupling with a bus waveguide through a multimode interference coupler.Traveling wave electrodes are employed to supply bidirectional bias ports,terminating with a 50-Ω impedance.The on/off extinction ratio of the microring reaches 43.3 dB due to the delicately tuning of the gain.An 11 mV V_(pp),a maximum 42.5 dB modulation depth and a 6.6 GHz bandwidth are realized,respectively.This proposed microring modulator could enrich the functionalities and designability of the fundamental integrated devices. 关键词：integrated photonics high-modulation-depth microring modulator

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Ultra-low V_(pp)and high-modulation-depth InP-based electro-optic microring modulator

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