Tin dioxide buffer layer-assisted efficiency and stability of wide-bandgap inverted perovskite solar cells

查看全文 作　　者：Bingbing [1,2,3,4]Chen;Pengyang [1,2,3,4]Wang;Ningyu [1,2,3,4,5]Ren;Renjie [1,2,3,4]Li;Ying [1,2,3,4]Zhao;Xiaodan [1,2,3,4]Zhang

机构地区：[1]Institute of Photoelectronic Thin Film Devices and Technology,Renewable Energy Conversion and Storage Center,Solar Energy Conversion Center,Nankai University,Tianjin 300350,China;[2]Key Laboratory of Photoelectronic Thin Film Devices and Technology of Tianjin,Tianjin 300350,China;[3]Engineering Research Center of Thin Film Photoelectronic Technology of Ministry of Education,Tianjin 300350,China;[4]Collaborative Innovation Center of Chemical Science and Engineering(Tianjin),Tianjin 300072,China;[5]School of Physical Science and Technology,Inner Mongolia University,Key Laboratory of Semiconductor,Hohhot 010021,China

出　　处：《Journal of Semiconductors》索引2022年第43卷第5期,共15页

基　　金：the supports from National Key Research and Development Program of China(Grant No.2018YFB1500103);the Overseas Expertise Introduction Project for Discipline Innovation of Higher Education of China(Grant No.B16027);Tianjin Science and Technology Project(Grant No.18ZXJMTG00220);the Fundamental Research Funds for the Central Universities,Nankai University(Grant Nos.63191736,ZB19500204);Natural Science Foundation of Tianjin(No.20JCQNJC02070);China Postdoctoral Scie nce Foundation(No.2020T130317)。 摘　　要：Inverted perovskite solar cells(IPSCs) have attracted tremendous research interest in recent years due to their applications in perovskite/silicon tandem solar cells. However, further performance improvements and long-term stability issues are the main obstacles that deeply hinder the development of devices. Herein, we demonstrate a facile atomic layer deposition(ALD) processed tin dioxide(SnO2) as an additional buffer layer for efficient and stable wide-bandgap IPSCs. The additional buffer layer increases the shunt resistance and reduces the reverse current saturation density, resulting in the enhancement of efficiency from 19.23% to 21.13%. The target device with a bandgap of 1.63 eV obtains open-circuit voltage of 1.19 V, short circuit current density of 21.86 mA/cm^(2), and fill factor of 81.07%. More importantly, the compact and stable SnO_(2) film invests the IPSCs with superhydrophobicity, thus significantly enhancing the moisture resistance. Eventually, the target device can maintain 90% of its initial efficiency after 600 h storage in ambient conditions with relative humidity of 20%–40% without encapsulation. The ALD-processed SnO_(2) provides a promising way to boost the efficiency and stability of IPSCs, and a great potential for perovskite-based tandem solar cells in the near future. 关键词：atomic layer deposition tin dioxide additional buffer layer efficiency and stability inverted perovskite solar cells

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Tin dioxide buffer layer-assisted efficiency and stability of wide-bandgap inverted perovskite solar cells

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