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	题名	作者	年代	出处	被引量
1	Status of silicon carbide(SiC) as a wide-bandgap semiconductor for high-temperature applications:a review 显示文摘	CASADY J B JOHNSON R W	1996	Solid State Electron1996，39，：	2
2	Recombination enhanced defect reactions 显示文摘	Kimerling L C	1978	Solid state Electronics1978，21，：	2
3	Band-edge photoluminescence of SiGe/ strained-Si/SiGe type-Ⅱ quantum well on Si (100)显示文摘	Nayak D K	1994	Solid State Electronics1994，37，：	1
4	Impact of gamma irradiation on the RF phase noise capability of UHV/CVD SiGe HBTs显示文摘	Niu G Juraver J B Borgarino M	2001	Solid- State Electronics2001，45，：	1
5	Compound Tellurides and Their Alloys for Peltier Cooling - A Review显示文摘	Yim W M Rosi F D	1972	Solid State Electronics1972，15，：	1
6	Investigation of degeneracy of current-voltage characteristics of asymmetrical IGBT with n-buffer layer concentration显示文摘	KHANNA V K KUMAR A SOOD S C	2001	Solid State Electronics2001，45，10：	1
7	A detailed experimental in- vestigation of impact ionization in n-channel metal-oxide- semiconductor field-effect-transistors at very low drain volt- ages 显示文摘	Anil K G Mahapatra S Eisele I	2003	Solid State Electronics2003，47，6：	1
8	ICP Dry Etching of ZnO and Effects of Hydrogen显示文摘	IP K OVERGERG M E WILSON R G	2003	Solid State Electronics2003，47，：	1
9	Resistance change in memory structures integrating CuTCNQ nanowires grown on dedicated HfO2 switching layer显示文摘	Muller C Deleruyelle D Müller R	2011	Solid State Electron2011，56，1：	1
10	Very low-power CMOS LNA for UWB wireless receivers using current-reused topology显示文摘	H.L. Kao K.C. Chang	2007	Solid State Electronics2007，，1：	1
11	Performance of nanocrystalline graphite field emitters显示文摘	Busta H H Espinosa R J Rakhimov A T Suetin N V	2001	Solid State Electronics2001，，45：	1
12	显示文摘	Grant W N	1973	Solid State Electron1973，16，：	1
13	Some Aspects of Semiconducting Barium Titanate显示文摘	Jonker G H	1964	Solid State Electronics1964，7，：	1
14	Some aspect of semiconducting barium titanate 显示文摘	JONKER G H	1964	Solid State Electron1964，7，12：	1
15	MEMS - Based Embedded Sensor Virtual Components for SoC 显示文摘	Afridi M Hefner A Berning D	2004	Solid - State Electronics2004，48，：	1
16	Some aspects of semiconducting barium titanate 显示文摘	JONKER G	1964	Solid State Electronics1964，7，：	1
17	N-doped ZnO based fast response ultraviolet photoconductive detector 显示文摘	Shind S S Bhosale C H	2012	Solid- State Electronics2012，68，：	1
18	Effect of the substrate on RF power-handling capability of micro-electromechanical capacitive switches显示文摘	Francesco Solazzi Cristiano Palego Subrata Halder James C.M. Hwang Alessandro Faes Viviana Mulloni Benno Margesin Paola Farinelli Roberto Sorrentino	2011	Solid State Electronics2011，，：	1
19	Strained single-crystal GOI (Ge on Insulator) arrays by rapid-melting growth from Si (111) micro-seeds显示文摘	T. Sakane K. Toko T. Tanaka T. Sadoh M. Miyao	2011	Solid State Electronics2011，，：	1
20	Charge retention of scaled SONOS nonvolatile memory devices at elevated temperatures显示文摘	YANG Y WHITE M H	2000	Solid State Electronics2000，44，6：	1

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