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| 1 | TiCuNi、AgCu和Ag钎料真空钎焊钛接头的电化学响应显示文摘接头的性质取决于界面形成相的性质、分布和形态。钎焊接头的力学性能有详细的文献记录,而对其电化学行为的研究却较少。因此,本研究的主要目的是了解用TiCuNi、AgCu共熔合金和Ag钎料钎焊工业纯钛接头界面处形成的相对其腐蚀行为的影响。在磷酸盐缓冲电解液中进行37℃下的开路电位和动电位极化实验,研究钛接头的电化学行为。结果表明,含Ag钎料对界面形成的富银相及钛相和工业纯钛间的微电偶腐蚀具有敏感性。然而,当使用TiCuNi钎料钎焊时,接头和母材之间没有显著差异。 | C.MARINHO F.TOPTAN A.GUEDES A.C.ALVES | 2021 | Transactions of Nonferrous Metals Society of China2021，31，4： | 2 |
| 2 | Primary infection of goats with Eimeria ninakohlyakimovae does not provide protective immunity against high challenge infections显示文摘 | A. Ruiz M.C. Mu?oz J.M. Molina C. Hermosilla F. Rodríguez M. Andrada S. Martín A.Guedes D. Pérez L. Matos A.M. López A. Taubert | 2013 | Small Ruminant Research2013，，1： | 1 |
| 3 | Infuence of Process Parameters on the RF Sputtered GaP Thin Films显示文摘In this work,gallium phosphide thin films were deposited on glass substrates by radio frequency(RF) magnetron sputtering technique under different depositions conditions.The X-ray diffraction analysis showed a diversity of states: from amorphous in the films deposited at 175℃ to a nearly stoichiometric and polycrystalline films,exhibiting cubic phase with preferred orientation along(220),in the films deposited at temperatures higher than 250℃.Scanning electron microscopy images revealed that all films were uniform with a smooth surface,while the energy-dispersive spectroscopy(EDS) analysis showed that there was a visible dependence on the Ga/P ratio in the deposition conditions and confirmed that a residual Ga metallic phase was presented in the surface of all the films.The Raman analysis showed the structural evolution of the GaP films was strongly dependent on the deposition conditions.The conductivity of the films was slightly dependent on the argon pressure and the rf power,but strongly dependent on the deposition temperature,mainly above 200℃.The optical transmission and absorption analyses of the GaP films revealed an indirect band gap of ~1.70 eV in the films deposited at temperatures less than 200℃,which transited to a band gap of 2.26 eV as the deposition temperature was close to 300℃. | D.A.Mota G.Hema Chandra J.Ventura A.Guedes J.Pérez de la Cruz | 2013 | Journal of Materials Science & Technology2013，29，9： | 0 |
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