| 1 | Tangential and Vertical Compact Torus Injection Experiments on the STOR-M Tokamak显示文摘This paper describes the setup and results of compact torus (CT) injection experiments on the STOR-M tokamak. Tangential CT injection into STOR-M induced H-mode-like phenomena including doubling the electron density, reduction in the Ha radiation level, suppression of the floating potential fluctuations, suppression of the m = 2 Mirnov oscillations, and increase in the global energy confinement time. Experimental setup, bench-test results, and some preliminary injection data for vertical CT injection experiments on STOR-M will be shown. In addition, numerical simulations of the CT trajectories in tokamak discharges for both tangential and vertical injection geometries will be discussed. | 肖持进 S.Livingstone A.K.Singh E.Zhang A.Hirose | 2005 | Plasma Science and Technology2005，7，2： | 1 |
| 2 | Plasma-enhanced Deposition of Nano-Structured Carbon Films显示文摘By pre-treating substrate with different methods and patterning the catalyst, selective and patterned growth of diamond and graphitic nano-structured carbon films have been realized through DC Plasma-Enhanced Hot Filament Chemical Vapor Deposition (PE-HFCVD).Through two-step processing in an HFCVD reactor, novel nano-structured composite diamond films containing a nanocrystalline diamond layer on the top of a nanocone diamond layer have been synthesized. Well-aligned carbon nanotubes, diamond and graphitic carbon nanocones with controllable alignment orientations have been synthesized by using PE-HFCVD. The orientation of the nanostructures can be controlled by adjusting the working pressure. In a Microwave Plasma Enhanced Chemical Vapor Deposition (MW-PECVD) reactor, high-quality diamond films have been synthesized at low temperatures (310 ℃~550 ℃) without adding oxygen or halogen gas in a newly developed processing technique. In this process, carbon source originates from graphite etching, instead of hydrocarbon. The lowest growth temperature for the growth of nanocrystalline diamond films with a reasonable growth rate without addition of oxygen or halogen is 260 ℃. | 杨巧勤 肖持进 A.Hirose | 2005 | Plasma Science and Technology2005，7，1： | 0 |
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