维普期刊资源整合服务平台（V6.5）

维普中文期刊产品整合服务

1篇 您的检索式：作者名="ALBERTO TIBALDI"

选中清除导出查看参考文献查看引证文献引用追踪共1页首页上一页第1页下一页末页 /1 跳转

		题名	作者	年代	出处	被引量
	1	Impact of carrier transport on the performance of QD lasers on silicon:a drift-diffusion approach显示文摘The operation of quantum dot lasers epitaxially grown on silicon is investigated through a quantum-corrected Poisson-drift-diffusion model.This in-house developed simulation framework completes the traditional rate equation approach,which models the intersubband transitions involved into simultaneous ground-state and excited-state lasing,with a physics-based description of carrier transport and electrostatic effects.The code is applied to look into some of the most relevant mechanisms affecting the lasing operation.We analyze the impact of threading dislocations on non-radiative recombination and laser threshold current.We demonstrate that asymmetric carrier transport in the barrier explains the ground-state power quenching above the excited-state lasing threshold.Finally,we study p-type modulation doping and its benefits/contraindications.The observation of an optimum doping level,minimizing the ground-state lasing threshold current,stems from the reduction of the electron density,which counteracts the benefits from the expected increase of the hole density.This reduction is due to electrostatic effects hindering electron injection.	MARCO SALDUTTI ALBERTO TIBALDI FEDERICA CAPPELLUTI MARIANGELA GIOANNINI	2020	Photonics Research2020，8，8：	1

返回顶部每页显示：

共1页首页上一页第1页下一页末页 /1 跳转

goolge学术搜索-维普

网站首页 | 关于我们 | 联系我们 | 产品服务 | 客服中心 | 广告服务 | 版权声明 | 网站联盟 | 友情链接 | 售卡网点

版权所有© 渝B2-20050021-1　渝公网安备 50019002500403号　违法和不良信息举报中心

互联网出版许可证新出网证(渝)字10号全国400电话 - 免长途话费