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| 1 | Scaling theory for cylindrical, fully-depleted, surrounding-gate MOSFET's 显示文摘 | Plummer J D | 1997 | IEEE Trans Elec Dev Lett1997，18，2： | 1 |
| 2 | A simple model for threshold voltage of surrounding-gate MOSFET's 显示文摘 | AUTH C P PLUMMER J D | 1998 | IEEE Transac tions on Electron Devices1998，45，11： | 1 |
| 3 | A 90-nm logic technology featuring strained-silicon 显示文摘 | THOMPSON S E ARMSTRONG M AUTH C | 2004 | IEEE Trans Elec Dev2004，51，11： | 1 |
| 4 | Scaling theoryfor cylindrical, fully depleted, surrounding-gate MOSFETPs 显示文摘 | AUTH C P PLUMMER J D | 1997 | IEEE Electron Dev Lett1997，18，2： | 1 |
| 5 | A 90-nm logic technology featuring strained-silicon 显示文摘 | THOMPSON S E ARMSTRONG M AUTH C | 2004 | IEEE Trans Elec Dev2004，51，11： | 1 |
| 6 | A 90-nm logic technology featuring strained-silicon显示文摘 | THOMPSON S E ARMSTRONG M AUTH C | 2004 | IEEE Trans Elec Dev2004，51，11： | 1 |
| 7 | Vitamins C and E to prevent complications of pregnancy associated hypertension显示文摘 | Roberts J M Myatt L Spong C Y Thom E A H auth J C Leveno K J | 2010 | N Engl J Med2010，362，： | 1 |
| 8 | Scaling theory for cylindrical fully depleted surrounding gate MOSFETs显示文摘 | C P Auth J D Plummer | 1997 | IEEE Electron Device Lett1997，18，1： | 1 |
| 9 | A 90-nm logic technology featuring strained-silicon显示文摘 | Thompson S E Armstrong M Auth C | 2004 | IEEE Trans Electron Devices2004，51，11： | 1 |
| 10 | Scaling theory for cylindrical, fully-depleted, surrounding-gate MOSFET's显示文摘 | AUTH C P PLUMMER J D | 1997 | IEEE Elec Dev Lett1997，18，2： | 1 |
| 11 | A 90-nm logic technology featuring strained-silicon显示文摘 | Thompson S E Armstrong M Auth C | 2004 | IEEE Trans Elec Dev2004，51，11： | 1 |
| 12 | Scaling theory for cylindrical, fully-depleted, surrounding-gate MOSFET's 显示文摘 | AUTH C P PLUMMER J D | 1997 | IEEE Transactions on Electron Devices1997，18，2： | 1 |
| 13 | A logic nanotechnology featuring strained-silicon显示文摘 | Thompson S E Armstrong M Auth C | 2004 | IEEE Electron Device Letters2004，25，4： | 1 |
| 14 | A logic nanotechnology featuring strained-silicon显示文摘 | Thompson S E Armstrong M Auth C | 2004 | IEEE Electron Device Letters2004，25，4： | 1 |
| 15 | A logic nanotechnology featuring strained silicon 显示文摘 | THOMPSON S E ARMSTRONG M AUTH C S | 2004 | IEEE Elec Dev Lett2004，25，4： | 1 |
| 16 | A 90 nm logic technology featuring strained-silicon 显示文摘 | THOMPSON S E ARMSTRONG M AUTH C | 2004 | IEEE Trans Elec Dev2004，51，11： | 1 |
| 17 | Scaling theory for cylindrical, fully-depleted, surrounding-gate MOSFET's显示文摘 | Auth C P Plummer J D | 1997 | IEEE Elec Dev Lett1997，18，2： | 1 |
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