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		题名	作者	年代	出处	被引量
	1	Continuous analyticⅠ-Ⅴmodel for GS DG MOSFETs including hot-carrier degradation effects显示文摘We have studied the influence of hot-carrier degradation effects on the drain current of a gate-stack double-gate(GS DG) MOSFET device.Our analysis is carried out by using an accurate continuous current-voltage (Ⅰ-Ⅴ) model,derived based on both Poisson’s and continuity equations without the need of charge-sheet approximation. The developed model offers the possibility to describe the entire range of different regions(subthreshold, linear and saturation) through a unique continuous expression.Therefore,the proposed approach can bring considerable enhancement at the level of multi-gate compact modeling including hot-carrier degradation effects.	Toufik Bentrcia Faycal Djeffal Abdel Hamid Benhaya	2012	Journal of Semiconductors2012，33，1：	4
	2	A novel mixed-mode current-conveyor based filter显示文摘	ABUELMA' ATTI BENTRCIA AL-SHAHRANI	2004	Int J Electronics2004，91，3：	1
	3	A novel mixed-mode CCII-based filter 显示文摘	ABUELMA' ATTI BENTRCIA	2004	Active and Passive Elec Comp2004，27，12：	1
	4	A novel mixed mode current conveyor based filter 显示文摘	Abuelmaattim T Bentrcia A Alshahrani SM	2004	Interna- tional Journal of Electronics2004，91，3：	1
	5	A projected parallel interference cancellation for asynchronous upstream OC- DMA-PON显示文摘	Seleem H Bentrcia A Fathallah H	2012	Communications Letters2012，16，11：	1
	6	A novel mixed-mode current-conveyor-based filter 显示文摘	ABUELMA'ATTI M T BENTRCIA A Al-SHAHRANI S M	2004	International Journal of Electronics2004，91，3：	1
	7	Numerical investigation of nanoscale SiGe DG MOSFET performance against the interfacial defects显示文摘	Toufik Bentrcia Fay?al Djeffal Zouhir Dibi Djemai Arar	2015	Phys. Status Solidi C . 2015 (1‐2)2015，，：	1

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