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48篇 您的检索式：作者名="Barquinha"

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	题名	作者	年代	出处	被引量
1	Oxide Semiconductor Thin‐Film Transistors: A Review of Recent Advances显示文摘	E. Fortunato P. Barquinha R. Martins	2012	Mater2012，，22：	2
2	Influence of time,light and temperature on the electrical properties of zinc oxide TFTs显示文摘	Fortunsto E Goncalves A	2006	Superlattices and Microstructures2006，39，14：	1
3	Oxide semiconductor thin film transistors:a review of recent advances显示文摘	FORTUNATO E BARQUINHA P MARTINS R	2012	Advanced Materials2012，24，22：	1
4	Wide-bandgap high-mobility ZnO thin-film transistors produced at room temperature 显示文摘	Fortunato E Barquinha P Pimentel A	2004	Appl Phys Lett2004，85，13：	1
5	InflUence of oxygen/argon ratio on the properties of sputtered hafnium oxide 显示文摘	Pereira L Barquinha P Fortunato E	2005	Materials Science and Engineering B2005，118，：	1
6	Influence of the semiconductor thickness on the electrical properties of transparent TFTs based on indium zinc oxide显示文摘	BARQUINHA P PIMENTEL A MARQUES A	2006	Journal of Non-Crystalline Solids2006，352，：	1
7	Wide-bandgap high-mobility ZnO thin-film transistors produced at room temperature显示文摘	Fortunato E M C Barquinha P M C Pimentel A C M B G		0，，：	1
8	Effect of anneal-ing temperature on the properties of IZO films and IZO based transparent TFTs显示文摘	Goncalves G Pereira L	2007	Thin Solid Films2007，515，24：	1
9	Influence of Post-Annealing Temperature on the Properties Exhibited by ITO,IZO and GZO Thin Films显示文摘	Gonalves G Elangovan E Barquinha P	2007	Thin Solid Films2007，515，：	1
10	Oxide semiconductor thin-film transistors: A review of recent advances显示文摘	Fortunato E Barquinha p Martins R	2012	Advanced Materials(S0935-9648)2012，24，22：	1
11	Recent advances in ZnO transparent thin film transistors 显示文摘	Fortunato E Barquinha P Pimentel A	2005	Thin Solid Films2005，487，2：	1
12	Insight on the SU-8 Resist as Passivation Layer for Transparent Ga203-In203-ZnO Thin-Film Transistors显示文摘	Antonis Olziersky Pedro Barquinha	2010	Journal of Applied Physics2010，108，06：	1
13	Insight on the SU- 8 Resist as Passivation Layer for Transparent (,a203-1n203-ZnO Thin-Film Transistors 显示文摘	Antonis Olziersky Pedro Barquinha Anna Vila	2010	Journal of Applied Physics2010，，：	1
14	Influence of time, light and temperature on the electrical properties of zinc oxide TFTs显示文摘	Barquinha P Fortunato E Goncalves A	2006	Superlattices and Microstructures2006，39，6：	1
15	Fully transparent ZnO thin-film tran- sistor produced at room temperature 显示文摘	Fortunato E M C Barquinha P M C Pimentel A C M B G	2005	Adv Mater2005，17，5：	1
16	Transport in high mobility amorphous wide band gap indium zinc oxide films显示文摘	Martins R Barquinha P Pimentel A		0，，09：	1
17	Influence of Metal Induced Crystallization Parameters on the Performance of Polycrystalline Silicon Thin Film Transistors显示文摘	Pereira L Barquinha P Fortunato E	2005	Thin Solid Films2005，487，：	1
18	Fully transparent ZnO thin- film transistor produced at room temperamre显示文摘	Fortunato E M C Barquinha P M C Pimentd ACMBG	2005	Adv Mat2005，17，5：	1
19	Effect of post-annealing on the properties of copper oxide thin films obtained from the oxidation of evaporated metallic copper显示文摘	V. Figueiredo E. Elangovan G. Gon?alves P. Barquinha L. Pereira N. Franco E. Alves R. Martins E. Fortunato	2008	Applied Surface Science2008，，13：	1
20	Fully transparent ZnO thin-film transistor produced atroom temperature显示文摘	Fortunato EMC Barquinha PMC Pimentel A C M B G	2005	Adv Mater2005，17，5：	1

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