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| 1 | Microstructure and mechanical properties of AlN films obtained by plasma enhanced chemical vapor deposition显示文摘 | Gustavo Sánchez B. Abdallah P. Tristant C. Dublanche-Tixier M. A. Djouadi M. P. Besland P. Y. Jouan A. Bologna Alles | 2009 | Journal of Materials Science2009，，22： | 1 |
| 2 | Deposition by Radio Frequency Magnetron Sputtering of GaV4Ss Thin Films for Resistive Random Access Memory Application 显示文摘 | Souchier E Besland MP Tranchant J | 2013 | Thin Solid Films2013，533，： | 1 |
| 3 | Electrical and optical characteristics of indium tin oxide thin films deposited by cathodic sputtering for top emitting organic electroluminescent devices显示文摘 | Vaufrey D Khalifa M B Besland M-P | 2002 | Materials Science and Engineering2002，21，： | 1 |
| 4 | Growth of passivating UV/ozone oxides on InP: Correlations be- tween chemical composition and interfaeial electrical properties 显示文摘 | BESLAND M P LOUIS P ROBACH Y | 1992 | Applied Surface Science1992，56，56： | 1 |
| 5 | Reactive Ion Etching of Sol-gel-processed SnOz Transparent Conducting Oxide As a New Material for Organic Light Emitting Diodes显示文摘 | Vaufrey D Khalifa M B Besland M P | 2002 | Synthetic Metals2002，127，3： | 1 |
| 6 | Reactive ion etching of sol-gel processed SnO2 transparent conducting oxide as a new material for organic light emitting diodes 显示文摘 | Vaufrey D Khalifa M B Besland M P | 2002 | Synthetic Metals2002，127，13： | 1 |
| 7 | Impact of the Cu-based Substrates and Catalyst Deposition Techniques on Carbon Nanotube Growth at Low Temperature by PECVD 显示文摘 | Dubosc M Minea T Besland M P | 2006 | Current Applied Physics2006，83，： | 1 |
| 8 | Deposition of AlN films by reactive sputtering: Effect of radiofrequency substrate bias显示文摘 | B. Abdallah A. Chala P.-Y. Jouan M.P. Besland M.A. Djouadi | 2007 | Thin Solid Films2007，，18： | 1 |
| 9 | Reactive ion etching of sol-gel-processed SnO2 transparent conducting oxide as a new material for organic light emitting diodes显示文摘 | Vaufrey D Khalifa M B Besland M P | | 0，，1： | 1 |
| 10 | Reactive ion etching of sol-gel processed SnO2 transparent conducting oxide as a new material for organic light emitting diodes显示文摘 | VAUFRY D BEN M BESLAND K M P | 2002 | Synth Met2002，127，： | 1 |
| 11 | Characteriza- tions of CNx Thin Films Made by Ionized Physical Vapor De- position显示文摘 | T TARD F DJEMIA P BESLAND M P | 2005 | Thin Solid Films2005，482，： | 1 |
| 12 | Reactive ion etching of sol-gel processed SnO2 transparent conducting oxide as a new material {or organic light emitting diodes显示文摘 | VAUFRE Y D BESLAND M P SANDU C | 2002 | Synth Met2002，127，： | 1 |
| 13 | 一种在室温合成具有宽带隙CdS的简单方法(英文)显示文摘采用简单的磁控溅射方法,在室温合成了Cd S多晶薄膜.在溅射Cd S多晶薄膜过程中,分别在Ar气中通入0%、0.88%、1.78%、2.58%和3.40%(体积分数,φ)的O2,得到不同O含量的Cd S多晶薄膜.通过X射线衍射仪、拉曼光谱仪、扫描电子显微镜、X射线光电子能谱仪、紫外-可见光谱仪对得到的Cd S多晶薄膜进行表征.分析结果表明:O的掺入能得到结合更加致密,晶粒尺寸更小的Cd S多晶薄膜;与溅射气体中没有O2时制备的Cd S多晶薄膜的光学带隙(2.48 e V)相比,当溅射气体中O2的含量为0.88%和1.78%(φ)时,制备得到的Cd S多晶薄膜具有更大的光学带隙,分别为2.60和2.65 e V;而当溅射气体中O2的含量为2.58%和3.40%(φ)时,得到的Cd S光学带隙分别为2.50和2.49 e V,与没有掺杂O的Cd S的光学带隙(2.48 e V)相当;当溅射气体中O2的含量为0.88%(φ)时,制备的Cd S多晶薄膜具有最好的结晶质量.通过磁控溅射方法,在溅射气体中O2含量为0.88%(φ)条件下制备的Cd S多晶薄膜表面沉积了Cd Te多晶薄膜并在Cd Cl2气氛中进行了高温退火处理,对退火前后的Cd Te多晶薄膜进行了表征.表征结果显示:Cd S中掺入O能得到结合更紧密、退火后晶粒尺寸更大的Cd Te多晶薄膜.通过磁控溅射方法,在Cd S制备过程中于Ar中掺入O2,在室温就能得到具有更大光学带隙的Cd S多晶薄膜,该方法是一种简单和有效的方法,非常适用于大规模工业化生产. | 李辉 刘向鑫 张玉峰 杜忠明 杨彪 韩俊峰 BESLAND Marie-Paule | 2015 | 物理化学学报2015，31，7： | 0 |
| 14 | Thin films of binary amorphous Zn-Zr alloys developed by magnetron co-sputtering for the production of degradable coronary stents:A preliminary study显示文摘1.Introduction Vascular stents are endo-prostheses that allow the restoration of blood flow in case of obstruction of a vessel.A stent usually consists of a corrosion-resistant metal such as Nitinol,316L steel or a CoCr alloy[1].Many studies have been undertaken for the production of polymer degradable stents[2,3]or metallic stents[4,5]and,among these,devices made of pure zinc or crystallized alloy based on zinc obtained by molding and extrusion are promising in terms of biodegradability,biocompatibility and mechanical properties[6],but also concerning the degradation rate of the stent which should to be effective until arterial remodeling and tissue healing are complete[5].The objective of this preliminary study is the comparison of the degradation in simulated biological medium and the endothelial cytotoxicity of amorphous and crystallized thin ZnZr films according to their composition and structure.In this work,the thin layers were deposited on silicon substrates by magnetron co-sputtering.This technology is already used to make metal stents[7,8]. | Nathalie Annonay Fatiha Challali Marie-Noelle Labour Valerie Bockelee A.Garcia-Sanchez Florent Tetard Marie-Paule Besland Philippe Djemia Frederic Chaubet | 2018 | Bioactive Materials2018，3，4： | 0 |
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