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您的检索式：作者名="Chanwon Park"
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| 1 | Transparent Access to Heterogeneous IoT Based on Virtual Resources显示文摘The Internet of Things(IoT)inspires industries to deploy a massive number of connected devices to provide smart and ubiquitous services to influence our daily life.Edge computing leverages sufficient computation and storage at the edge of the network to enable deploying complex functions closer to the environment using Internet-connected devices.According to the purpose of the environment including privacy level,domain functionality,network scale and service quality,various environment-specific services can be provided through heterogeneous applications with sensors and actuators based on edge computing.However,for providing user-friendly service scenarios based on the transparent access to heterogeneous devices in edge computing,a consistent interface shall be provided to deliver services from edge computing to clients.In this paper,we propose transparent computing based on virtual resources to access heterogeneous IoT devices without considering the underlying network configuration at the edge of the networks.For supporting transparent access to different edge computing environments through a consistent interface,the virtual resource of edge gateway is proposed to bridge the Internet and devices which are deployed on the edge of the network.The proposed edge gateway exposes the services of the Internet of Things devices to the Internet using virtual resources that represent the resources of physical devices.The virtual resources provide a consistent interface to enable clients to access devices in edge computing without considering underlying protocols.The virtual resource is generated by the resource directory in the edge gateway through the registration of a device.Based on the device registration,the device information is stored in the gateway to link virtual resources and devices for translating messages according to the destination protocols and identifying physical devices that are represented by virtual resources.Moreover,through collaboration with the service provider,the function of device discovery and monitoring is provided to clients. | Wenquan Jin Sunhwan Lim Young-Ho Suh Chanwon Park Dohyeun Kim | 2023 | Computers, Materials & Continua2023，，3： | 0 |
| 2 | Enhanced thermoelectric properties of NbCoSn half-Heuslers through in-situ nanocrystallization of amorphous precursors during the consolidation process显示文摘Tailoring nanostructures is a general approach used to obtain enhanced thermoelectric properties for halfHeusler compounds because the wide areas of grain and phase boundaries could be scattering centers that lower lattice thermal conductivity.However,a common fabrication method based on the sintering of crystalline precursors crushed from as-cast alloy ingots has limitations in obtaining a homogeneous microstructure without microsized impurity phases,owing to residual elemental segregation from casting.In this study,we used amorphous NbCoSn alloys as a precursor for the sintered specimen to obtain a homogeneous NbCoSn bulk specimen without microsized impurity phases and segregation,which led to the enhanced Seebeck coefficient due to the high purity of the half-Heusler phase after crystallization.Moreover,superplasticity originating from amorphous features enabled the powders to be largely deformed during the sintering process,even at a low sintering temperature(953 K).This resulted in less oxidation at both,the grain boundary and the interior,as the O diffusion pathway was blocked during the sintering process.As a result,the NbCoSn0.95Sb0.05 specimen using an amorphous precursor exhibited an enhanced zT of 0.7,due to the increase in the power factor and a decrease in lattice thermal conductivity compared to the specimen using a crystalline precursor. | Chanwon Jung Kyuseon Jang Hail Park Jeongin Jang Hanhwi Jang Byungchul Kang Kitae Park Siyuan Zhang Ruben Bueno Villoro SuDong Park Ho Jin Ryu Yeon Sik Jung Min-Wook Oh Christina Scheu Seong-Hoon Yi Pyuck-Pa Choi | 2023 | Journal of Materials Science & Technology2023，，34： | 0 |
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