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| 1 | Spectrum projection with a bandgap-gradient perovskite cell for colour perception显示文摘Optoelectronic devices for light or spectral signal detection are desired for use in a wide range of applications,including sensing,imaging,optical communications,and in situ characterization.However,existing photodetectors indicate only light intensities,whereas multiphotosensor spectrometers require at least a chip-level assembly and can generate redundant signals for applications that do not need detailed spectral information.Inspired by human visual and psychological light perceptions,the compression of spectral information into representative intensities and colours may simplify spectrum processing at the device level.Here,we propose a concept of spectrum projection using a bandgap-gradient semiconductor cell for intensity and colour perception.Bandgap-gradient perovskites,prepared by a halide-exchanging method via dipping in a solution,are developed as the photoactive layer of the cell.The fabricated cell produces two output signals:one shows linear responses to both photon energy and flux,while the other depends on only photon flux.Thus,by combining the two signals,the single device can project the monochromatic and broadband spectra into the total photon fluxes and average photon energies(i.e.,intensities and hues),which are in good agreement with those obtained from a commercial photodetector and spectrometer.Under changing illumination in real time,the prepared device can instantaneously provide intensity and hue results.In addition,the flexibility and chemical/bio-sensing of the device via colour comparison are demonstrated.Therefore,this work shows a human visual-like method of spectrum projection and colour perception based on a single device,providing a paradigm for high-efficiency spectrum-processing applications. | Mei-Na Zhang Xiaohan Wu Antoine Riaud Xiao-Lin Wang Fengxian Xie Wen-Jun Liu Yongfeng Mei David Wei Zhang Shi-Jin Ding | 2020 | Light(Science & Applications)2020，9，1： | 4 |
| 2 | 重组卡介苗表达的MalE蛋白T细胞表位的鉴定显示文摘目的 鉴定重组卡介苗表达的MalE蛋白T细胞表位。方法 用抗原提呈试验、T细胞增殖试验、ELISPOT试验和表位作图测试重组MalE蛋白的T细胞表位。结果 重组BCG MalE功能性表达了MalE蛋白的 4种H 2 d 限制性T细胞表位。结论 在 4种表位中 ,p6 8~ 82是重组MalE蛋白的主要T细胞表位 ,而其余 | 焦新安 Richard Lo-man Edith Driaud Sophie Burgaud Brigitte Gicquel Nathalie Winter Claude Leclerc 刘秀梵 | 2002 | 中华微生物学和免疫学杂志2002，22，1： | 3 |
| 3 | M0S2 dual-gate transistors with electrostatically doped contacts显示文摘Two-dimensional(2D)transition metal dichalcogenides(TMDs)such as molybdenum disulfide(M0S2)have been intensively investigated because of their exclusive physical properties for advaneed electronics and optoelectronics.In the present work,we study the M0S2 transistor based on a novel tri-gate device architecture,with dual-gate(Dual-G)in the channel and the buried side-gate(Side-G)for the source/drain regi ons.All gates can be in depe ndently con trolled without in terfere nee.For a MoS2 sheet with a thick ness of 3.6 nm,the Schottky barrier(SB)and non-overlapped channel region can be effectively tuned by electrostatically doping the source/drain regions with Side-G.Thus,the extri nsic resista nee can be effectively lowered,and a boost of the ON-state cur re nt can be achieved.Mean while,the cha nn el c ontrol remai ns efficient under the Dual-G mode,with an ON-OFF current ratio of 3 x 107 and subthreshold swing of 83 mV/decade.The corresponding band diagram is also discussed to illustrate the device operati on mechanism.This no vel device structure ope ns up a new way toward fabricati on of high-performance devices based on 2D-TMDs. | Fuyou Liao Yaocheng Sheng Zhongxun Guo Hongwei Tang Yin Wang Lingyi Zong Xinyu Chen Antoine Riaud Jiahe Zhu Yufeng Xie Lin Chen Hao Zhu Qingqing Sun Peng Zhou Xiangwei Jiang Jing Wan Wenzhong Bao David Wei Zhang | 2019 | Nano Research2019，12，10： | 2 |
| 4 | 重组卡介苗感染树突细胞的研究显示文摘在体内外试验中 ,树突细胞 (DC)均能摄取表达大肠杆菌麦芽糖结合蛋白 (MalE)的重组卡介苗 (rBCG·MalE)。应用流式细胞术测得荧光标记的rBCG·MalE在体内感染DC的水平在 1 % 2 % ,与感染巨噬细胞 (MΦ)的水平相当。体外抗原提呈试验结果显示 ,DC和MΦ能吞噬、加工rBCG·MalE并向T细胞杂交瘤FBU·B1 1提呈MalE蛋白抗原表位 ,而在体内试验中 ,从rBCG·MalE免疫小鼠脾脏中纯化的DC ,可检测到MalE表位MHCⅡ复合物 ,而纯化的MΦs却测不到。这表明DC在起始抗分枝杆菌的免疫保护中发挥关键作用。 | 焦新安 Richard Lo-Man Pierre Guermonprez Edith Dériaud Brigitte Gicquel Nathalie Winter Claude Leclerc 刘秀梵 | 2002 | 扬州大学学报(农业与生命科学版)2002，23，1： | 2 |
| 5 | Annular groove phase mask coronagraph显示文摘 | MAWET D RIAUD P ABSIL O | 2005 | The Astrophysical Journal2005，633，2： | 1 |
| 6 | Charge transport and quantum confinement in MoS2 dual-gated transistors显示文摘Semiconductive two dimensional(2D)materials have attracted significant research attention due to their rich band structures and promising potential for next-generation electrical devices.In this work,we investigate the MoS2 field-effect transistors(FETs)with a dual-gated(DG)architecture,which consists of symmetrical thickness for back gate(BG)and top gate(TG)dielectric.The thickness-dependent charge transport in our DG-MoS2 device is revealed by a four-terminal electrical measurement which excludes the contact influence,and the TCAD simulation is also applied to explain the experimental data.Our results indicate that the impact of quantum confinement effect plays an important role in the charge transport in the MoS2 channel,as it confines charge carriers in the center of the channel,which reduces the scattering and boosts the mobility compared to the single gating case.Furthermore,temperature-dependent transfer curves reveal that multi-layer MoS2 DG-FET is in the phonon-limited transport regime,while single layer MoS2 shows typical Coulomb impurity limited regime. | Fuyou Liao Hongjuan Wang Xiaojiao Guo Zhongxun Guo Ling Tong Antoine Riaud Yaochen Sheng Lin Chen Qingqing Sun Peng Zhou David Wei Zhang Yang Chai Xiangwei Jiang Yan Liu Wenzhong Bao | 2020 | Journal of Semiconductors2020，41，7： | 0 |
| 7 | Hydrodynamic constraints on the energy efficiency of droplet electricity generators显示文摘Electric energy generation from falling droplets has seen a hundred-fold rise in efficiency over the past few years.However,even these newest devices can only extract a small portion of the droplet energy.In this paper,we theoretically investigate the contributions of hydrodynamic and electric losses in limiting the efficiency of droplet electricity generators(DEG).We restrict our analysis to cases where the droplet contacts the electrode at maximum spread,which was observed to maximize the DEG efficiency.Herein,the electro-mechanical energy conversion occurs during the recoil that immediately follows droplet impact.We then identify three limits on existing droplet electric generators:(i)the impingement velocity is limited in order to maintain the droplet integrity;(ii)much of droplet mechanical energy is squandered in overcoming viscous shear force with the substrate;(iii)insufficient electrical charge of the substrate.Of all these effects,we found that up to 83%of the total energy available was lost by viscous dissipation during spreading.Minimizing this loss by using cascaded DEG devices to reduce the droplet kinetic energy may increase future devices efficiency beyond 10%. | Antoine Riaud Cui Wang Jia Zhou Wanghuai Xu Zuankai Wang | 2021 | Microsystems & Nanoengineering2021，7，3： | 0 |
| 8 | Design of interdigitated transducers for acoustofluidic applications显示文摘Interdigitated transducers(IDTs)were originally designed as delay lines for radars.Half a century later,they have found new life as actuators for microfluidic systems.By generating strong acoustic fields,they trigger nonlinear effects that enable pumping and mixing of fluids,and moving particles without contact.However,the transition from signal processing to actuators comes with a range of challenges concerning power density and spatial resolution that have spurred exciting developments in solid-state acoustics and especially in IDT design.Assuming some familiarity with acoustofluidics,this paper aims to provide a tutorial for IDT design and characterization for the purpose of acoustofluidic actuation.It is targeted at a diverse audience of researchers in various fields,including fluid mechanics,acoustics,and microelectronics. | Shuren Song Qi Wang Jia Zhou Antoine Riaud | 2022 | Nanotechnology and Precision Engineering2022，5，3： | 0 |
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