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	题名	作者	年代	出处	被引量
1	Use of diethylselenide as a less- hazardous source for preparation of CulnSe2 photo-absorbers by selenization of metal precursors 显示文摘	CHICHIBU S F SUGIYAMA M	2002	Journal of Crystal Growth2002，243，：	1
2	Impact of internal electric field and localization effect on quantum well excitons in AlGaN/GaN/InGaN light emitting diodes显示文摘	Chichibu S F Sota T Wada K		0，，01：	1
3	Helicon-wave excited- plasma sputtering epitaxy of ZnO on sapphire(0001)Substrates 显示文摘	Chichibu SF Yoshida T Onuma T	2002	Journal of Applied Physics2002，91，：	1
4	Helicon-wave excitedplasma sputtering epitaxy of ZnO on sapphire(0001) Substrates显示文摘	Yoshida T Onuma T	2002	Journal of Applied Physics2002，91，：	1
5	Helicon-wave-excited-plasma sputtering epitaxy of ZnO on sapphire (0001) substrates显示文摘	Chichibu S F Yoshida T Onuma T	2002	J Appl Phys2002，91，2：	1
6	Origin of defect-insensitive emission probability in In-containing (AI, In, Ga) N alloy semiconductors 显示文摘	Chichibu S Uedono A Onuma T	2006	Nature Materials2006，5，10：	1
7	EL2 deep level distribution under controlled As pressure annealing of LEC GaAs 显示文摘	Chichibu S Ohkubo N Matsuoto S	1988	Semi-Insulating Ⅲ-Ⅴ Materials1988，，：	1
8	Photoreflectanee spectra of excitonic polaritons in GaN substrate prepared by lateral epitaxial overgrowth显示文摘	Chichibu S F Torii K Deguchi T	2000	Appl Plays Lett2000，76，：	1
9	Effective band gap inhomogeneity and piezoelectric field in InGaN/GaN multiquantum well structures显示文摘	Chichibu S F Abare A C Minsky M S Keller S Fleischer S B Bowers J E Hu E Mishra U K Coldren L A DenBaars S P Sota T		0，，14：	1
10	Reduced Defect Densities in the ZnO Epilayer Grown on Si Substrates by Laser-assisted Molecular-beam Epitaxy Using a ZnS Epitaxial Buffer Layer显示文摘	Onuma T Chichibu S F Uedono A	2004	Appl Phys Lett2004，85，23：	1
11	Reduced defect densities in the ZnO epilayer grown on Si substrates by laser-assisted molecular-beam epitaxy using a ZnS epitaxial buffer layer显示文摘	ONUMA T CHICHIBU S F UEDONO A	2004	Applied Physics Letters2004，85，23：	1
12	Effects of bi?axial strain on exciton resonance energies of hexagonal GaN heteroepitaxiallayers显示文摘	Chichibu S Shikanai A Azuhata T et a1	1996	Appl Phys Lett1996，68，26：	1
13	Growth of cubicIII-nitrides by gas source MBE using atomic nitrogen plasma: GaN,AlGaN and AlN 显示文摘	OKUMURA H HAMAGUCHI H KOIZUMI T BALAKRISHNAN K ISHIDA Y ARITA M CHICHIBU S NAKANISHI H NAGATOMO T YOSHIDA S	1998	Yoshida J Cryst Growth1998，189，190：	1
14	Temporal and spatial properties of slow waves in the electroencephalogram of sponta-neously hypertensive rats显示文摘	Chichibu S Ohta Y Chikugo T	1995	Clin Exp Pharmacol Physiol1995，22，1：	1
15	Helicon-wave-excited-plasma sputtering epitaxy of ZnO on sapphire (001) substrates显示文摘	Yoshida T Onuma T	2002	Appl Phys2002，93，2：	1
16	Correlation between the photoluminescence lifetime and defect densityin bulk and epitaxial ZnO显示文摘	T Koida S F Chichibu A Uedono	2003	Appl Phys Lett2003，82，：	1
17	Repeated temperature modulation epitaxy for p-type doping and light-emitting diode based on ZnO显示文摘	Tsukazaki A Ohtomo A Onuma T Ohtani M Makino T Sumiya M Ohtani K Chichibu S F Fuke S Segawa Y Ohno H Koinuma H Kawasaki M		0，，1：	1
18	Repeated temperature modulation epitaxy for p-type doping and light-emitting diode based on ZnO 显示文摘	TSUKAZAKI A OHOTMO A ONUMA T OHTANI M MAKINO T SUMIYA M OHTANI K CHICHIBU S A FUKE S SEGAWA Y OHNO H KOINUMA H KAWASAKI M	2005	Nature Materials2005，4，：	1
19	Assay of serum hyaluronic acid in clinical applicatoin显示文摘	Chichibu K Matsuura T Shichijo S	1989	Clin Chim Acta1989，181，：	1
20	Surface stoichiometry and activity control for atomically smooth low dislocation density ZnO and pseudomorphic MgZnO epitaxy on a Zn-polar ZnO substrate by the helicon-wave-excited-plasma sputtering epitaxy method显示文摘	Sawai Y Hazu K Chichibu S F		0，，06：	1

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