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		题名	作者	年代	出处	被引量
	1	Enhanced thermoelectric properties of SnSe thin films grown by pulsed laser glancing-angle deposition显示文摘SnSe single crystals have been demonstrated to possess excellent thermoelectric properties.In this work,we demonstrate a grain size control method in growing nanocrystalline SnSe thin films through a glancing angle pulsed-laser deposition approach.Structural characterization reveals that the SnSe film deposited at a normal angle has a preferred orientation along a axis,while by contrast,the SnSe film deposited at an 80glancing angle develops a nanopillar structure with the growth direction towards the incident atomic flux.The glancing angle deposition greatly reduces the grain size of the thin film due to a shadowing effect to the adatoms,resulting in significantly increased power factor for more than 100%.The maximum Seebeck coefficient and power factor are 498.5 mV=K and 18.5 mWcm^(-1)K^(-2),respectively.The enhancement of thermoelectric property can be attributed to the potential barrier scattering at grain boundaries owing to the reduced grain size and increased grain boundaries in the film.Given this enhanced power factor,and considering the fact that the nanopillar structure should have much lower thermal conductivity than a plain film,the zT value of such made SnSe film could be significantly larger than the corresponding single crystal film,making it a good candidate for thin film-based thermoelectric device.	Chun Hung Suen Dongliang Shi Y.Su Zhi Zhang Cheuk Ho Chan Xiaodan Tang Y.Li Kwok Ho Lam Xinxin Chen B.L.Huang X.Y.Zhou Ji-Yan Dai	2017	Journal of Materiomics2017，3，4：	1
	2	High thermoelectric performance of ZrTe_(2)/SrTiO_(3) heterostructure显示文摘Achieving high thermoelectric pe rformance in thin fiIm heterostructures is essental for integrated and minlatured ther moelectric device applcations.In this work,we d emonstrate a mechansm and device performance of enh anced themoelectnic perfomance induced by interfuclal effect in a tansitdon metal dichalcogenides SrTiO_(3)(STO)heterpstructure Owing to the fomed conductive interface and elevated conductivity.the ZrTe_(2)/STO he teras tructure presents large thermoelectric power factor of 3.7×10^(5)μWcm^(-1)K^(-2) at 10 K.Fomat ion of quasi-wo dimensional conductance at the interface s atributed for the lage Seebeck coffcent and high electnical conductivity leading to high thermoelectric perfor mance which is demonstrated by a prototype device attaining 3 K cooling with 100 mA current input to this heterostructure This supenior themoelectnic property makes this he teros tructure a promtsing candidate for future thermoelectric device.	Chun Hung Suen Long Zhang Kunya Yang M.Q.He Y.S.Chai K.Zhou Huichao Wang X.Y.Zhou Ji-Yan Dai	2022	Journal of Materiomics2022，8，3：	0

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