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96篇 您的检索式：作者名="Cressler"

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	题名	作者	年代	出处	被引量
1	The effects of proton irradiation on the RF performance of SiGe HBTs 显示文摘	ZHANG S M CRESSLER J D CLARK S D	1999	IEEE Transactions on Nuclear Science1999，46，6：	1
2	A comparison of the effects of gamma irradiation on SiGe HBT and GaAs HBT technologies显示文摘	Zhang S Niu G Cressler J D	2000	IEEE Trans on Nucl Sci2000，47，：	1
3	Si/SiGe epitaxial-base transistors-part I: materials, physics and circuits 显示文摘	HARAME D L COMFORT J H CRESSLER J D	1995	IEEE TED1995，42，3：	1
4	Optimization of Early voltage for cooled SiGe HBT precision current sources 显示文摘	JOSEPH A J CRESSLER J D RICHEY D M	1995	J Phys IV1995，6，3：	1
5	RF linearity characteristics of SiGe HBTs显示文摘	Niu Guofu Liang Qingqing Cressler Jhon D	2001	IEEE Transactions on Microwave Theory and Techniques2001，49，9：	1
6	Scaling issues and Ge profile optimization in advanced UHV/CVD SiGe HBT' s 显示文摘	RICHEY D M CRESSLER J D JOSEPH A	1997	IEEE TED1997，44，3：	1
7	Si/SiGe epitaxial base transistors - Part I: materials, physics, and circuits 显示文摘	HARAME D L CRESSLER J D CRABBE E F	1995	IEEE Trans Elec Dev1995，42，3：	1
8	Total dose and single-event effects in silicon germanium heterojunction bipolar transistors显示文摘	Cressler J D	2004	International Journal of High Speed Electronics and Systems2004，14，：	1
9	Evidence for noreequilibrum base transport in Si and SiGe bipolar transistors at cryogenic temperature显示文摘	Richey D M Joseph A J Cressler J D	1997	Solid-State Electronics1997，39，：	1
10	Si/SiGe epitaxial-base transistor-part 1:materials,physics,and circuits 显示文摘	Comfort J H Cressler J D	1995	IEEE Electron Devices1995，42，3：	1
11	A Unified Approach to RF and Microwave Noise Parameter Modeling in Bipolar Transistors显示文摘	NIU G CRESSLER JD ZHANG S	2001	IEEE Trans Electron Dev2001，48，11：	1
12	Base profile optimization for minimum noise figure in advanced UHV/CVD SiGe HBTs 显示文摘	ANSLEY W E CRESSLER J D RICHEY D M	1994	IEEE Trans Microw Theory Tech1994，46，：	1
13	SiGe HBT technology:a new contender for Si-Based RF and microwave circuit applications显示文摘	John D Cressler	1998	IEEE Transactions On Microwave Theory And Techniques1998，46，5：	1
14	On the consistent modeling of band-gap narrowing for accurate device-level simulation of scaled SiGe HBTs 显示文摘	SHI Y NIU G CRESSLER J D	2003	IEEE Trans on ED2003，50，5：	1
15	Transistor noise in SiGe HBT RF technology显示文摘	Niu G-F Jin Z-R Cressler J D Rapeta R	2001	IEEE J Sol Sta Circ2001，36，9：	1
16	SiGe HBTs technology: a new contender for Si-based RF and microwave circuit application显示文摘	Cressler J D	1998	IEEE Transactions on Microwave Theory and Techniques1998，46，5：	1
17	Si/SiGe epitaxial-base transistors - Part Ⅱ : Process Integration and Analog Applications 显示文摘	Harame D L Comfort J H Cressler J D	1995	IEEE Trans Elec Dev1995，42，30：	1
18	Radiation effects in SiGe technology显示文摘	Cressler J D	2013	IEEE Transactions on Nuclear Science2013，60，3：	1
19	Ionizing radiation tolerance of high-performance SiGe HBTs's grown by UHV-CVD显示文摘	Babcock J A Cressler J D Vempati L S	1994	IEEE Transactions on Nuclear Science1994，42，6：	1
20	A comparison of the effects of gamma irradiation on SiGe HBTs and GaAs HBT technologies显示文摘	Zhang S M Niu G F Cressler J D	2000	IEEE Transactions on Nuclear Science2000，47，6：	1

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