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| 1 | Drift characteristics of green macroalgae in the Yellow Sea in 2008 and 2010显示文摘In order to investigate the aggregation mechanism of green macroalgae (Enteromorpha prolifera) on the Qingdao coastline,the macroalgal drift characteristics in the Yellow Sea during June and July in 2008 and 2010 were simulated using a three-dimensional wave-tide-circulation coupled model.In June 2008,the monthly-mean surface current flowed onshore and its direction was almost perpendicular to the Qingdao coastline,which was identified as the main reason for a huge accumulation of algae in the coastal waters off Qingdao.The current became parallel to the coastline in July 2008;this shift in current direction led to little accumulation of algae near Qingdao and thus relieved the environmental pressure on the Olympic sailing events.By using the coupled model,we predicted that there would be no serious algal accumulation at Qingdao in late June 2010,which was later confirmed by observations.This study demonstrated that the drift path of macroalgae near Qingdao is mainly controlled by the surface current,which is primarily driven by wind.Regional climate change is therefore one of the means by which physical processes affect marine ecosystems. | QIAO FangLi WANG GuanSuo LüXinGang DAI DeJun | 2011 | Chinese Science Bulletin2011，56，21： | 25 |
| 2 | A GaN/InGaN/AlGaN MQW RTD for versatile MVL applications with improved logic stability显示文摘To improve the logic stability of conventional multi-valued logic(MVL) circuits designed with a GaNbased resonate tunneling diode(RTD), we proposed a GaN/InGaN/AlGaN multi-quantum well(MQW) RTD. The proposed RTD was simulated through solving the coupled Schrodinger and Poisson equations in the numerical non-equilibrium Green's function(NEGF) method on the TCAD platform. The proposed RTD was grown layer by layer in epitaxial technologies. Simulated results indicate that its current-voltage characteristic appears to have a wider total negative differential resistance region than those of conventional ones and an obvious hysteresis loop at room temperature. To increase the Al composite of AIGaN barrier layers properly results in increasing of both the total negative differential resistance region width and the hysteresis loop width, which is helpful to improve the logic stability of MVL circuits. Moreover, the complement resonate tunneling transistor pair consisted of the proposed RTDs or the proposed RTD and enhanced mode HEMT controlled RTD_8 is capable of generating versatile MVL modes at different supply voltages less than 3.3 V, which is very attractive for implementing more complex MVL function digital integrated circuits and systems with less devices, super high speed linear or nonlinear ADC and voltage sensors with a built-in super high speed ADC function. | Haipeng Zhang Qiang Zhang Mi Lin Weifeng Lü Zhonghai Zhang Jianling Bai Jian He Bin Wang Dejun Wang | 2018 | Journal of Semiconductors2018，39，7： | 1 |
| 3 | Research of Flow Measurement o{ Low-production Horizontal Well by Thermal Tracing and Development of Prototype 显示文摘 | Yanchang L Dejun L Ronghua X | 2012 | International Journal of Digital Content Technolo- gy ~ Its Applications2012，6，15： | 1 |
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