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| 1 | Design and simulation of reverse-blocking Schottky-drain AlN/AlGaN HEMTs with drain field plate显示文摘In this paper,Schottky-drain reverse-blocking Al N/Al Ga N HEMTs with drain field plate(FP)have been investigated by Silvaco-ATLAS tools.For HEMTs without FP,with the increase of Al mole fraction in Al Ga N channel from 0 to 0.5,the reverse-blocking voltage increases from-158 V to-720 V.By using the drain field plate technique,a second electric field peak is introduced and the reverse-blocking voltage can be improved.Combined with the optimization of the Si N passivation thickness,optimal electric field management can be achieved to obtain the highest reverse-blocking voltage devices.Since HEMTs with different Al mole fractions possess different critical electric field values,the optimal Si N thickness are varied.With the increase of the Al mole fraction from 0 to 0.5,the reverse-blocking voltage increases from-510 V to-4500 V for HEMTs using drain FP and optimal Si N passivation thickness,and a high power figure-of-merit of 1.171 GW/cm^(2)is achieved.Al Ga N channel HEMTs with Al mole fraction demonstrate great potential for power applications. | Dujun ZHAO Zhaoxi WU Chao DUAN Bo MEI Zhongyang LI Zhongxu WANG Qing TANG Qing YANG Yinhe WU Weihang ZHANG Zhihong LIU Shenglei ZHAO Jincheng ZHANG Yue HAO | 2022 | Science China(Information Sciences)2022，65，2： | 1 |
| 2 | Rice transcription factors OsLBD37/38/39 regulate nitrate uptake by repressing OsNRT2.1/2.2/2.3 under high-nitrogen conditions显示文摘Nitrate(NO_(3)^(-)) uptake involves a finely regulated and complex multilevel response system.Elucidating the molecular mechanism of nitrate uptake may lead to improving the growth and productivity of plants in the presence of dynamic variation in nitrate concentration.In this study,we identified three lateral organ boundaries domain(LBD)transcription factors,OsLBD37,OsLBD38,and OsLBD39,as regulators of nitrate uptake in response to nitrogen(N)availability.OsLBD37,OsLBD38,and OsLBD39 were induced by ammonium and glutamine in rice roots.Individual or collective knockout of OsLBD37,OsLBD38,and OsLBD39 led to increased concentrations of nitrate and increased expression of OsNRT2.1,OsNRT2.2,and OsNRT2.3respectively under high-N conditions,whereas overexpression of each of these three LBD genes produced opposite effects where N accumulation was reduced.Dual-luciferase reporter assay further confirmed that OsLBD37,OsLBD38,and OsLBD39 possessed transcription inhibitory activities in rice protoplast cells,downregulating the expression of OsNRT2.1/OsNRT2.2/OsNRT2.3.Yeast two-hybrid and bimolecular fluorescence complementation assays showed that OsLBD37 interacted with OsLBD37,OsLBD38,and OsLBD39in the nucleus.Together,these results show that OsLBD37,OsLBD38,and OsLBD39 collaborate to inhibit the expression of OsNRT2.1/OsNRT2.2/OsNRT2.3 transporters under N-sufficient conditions,thereby helping rice plants avoid excessive nitrate accumulation that may affect their growth. | Xinxin Zhu Dujun Wang Lijuan Xie Tao Zhou Jingyi Zhao Qian Zhang Meng Yang Wenjuan Wu Xingming Lian | 2022 | The Crop Journal2022，10，6： | 0 |
| 3 | Investigation of heavy ion irradiation effects on 650-V p-GaN normally-off HEMTs显示文摘In this study,we investigate heavy ion irradiation effects on commercial 650 V p-GaN normallyoff HEMTs.Ge and Cl ions are used to irradiate the GaN devices in the experiments.Ge and Cl ion beam irradiation have little impact on the output characteristics of GaN devices.After heavy ion irradiation,the leakage currents between source and drain electrodes increase significantly under off-state,decreasing the breakdown voltage(BVDS)sharply.Additionally,Ge and Cl ion irradiation have little effect on the trap states under the gate electrode;thus,the gate leakage currents increase slightly.Many line-shaped crystal defects extending from the surface to the GaN buffer layer can be captured using a transmission electron microscope after Ge/Cl ion irradiation.The buffer layers of the irradiated devices were damaged,and the leakage path was generated in the buffer layer.Defect percolation process in buffer layer is the dominant factor of irradiated high-voltage GaN device failure. | Yinhe WU Jincheng ZHANG Shenglei ZHAO Zhaoxi WU Zhongxu WANG Bo MEI Chao DUAN Dujun ZHAO Weihang ZHANG Zhihong LIU Yue HAO | 2022 | Science China(Information Sciences)2022，65，8： | 0 |
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