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15篇 您的检索式：作者名="Foll V"

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		题名	作者	年代	出处	被引量
	1	Formation mechanism and properties of electrochemically etched trenches in n - type Silicon 显示文摘	Foll V	1990	Electrochem Soc1990，137，2：	1
	2	Processing of three- dimensional microstructures using macroporous n-type silicon 显示文摘	OTTOW S LEHMANN V FOLL H	1996	J Electrochem Soc1996，143，1：	1
	3	Formation mechanism and properties of electrochemically etched trenches in n-type silicon 显示文摘	Lehmann V Foll H	1990	J Electrochem Soc1990，137，2：	1
	4	Processing of three-dimensional microstructures using macroporous n-type silicon 显示文摘	Ottow S Lehmann V Foll H	1996	J Eleetrochem Soe1996，143，：	1
	5	Lipid sensing in the brain and regulation of energy balance显示文摘	Moull6 V S Picard A Le Foll C	2014	Diabetes Metab2014，40，1：	1
	6	Fatty acid transporter CD36 mediates hypothalamic effect of fatty acids on food in- take in rats显示文摘	Moull6 V S Le Foll C Philippe E	2013	PLoS One2013，8，74：	1
	7	Fluorescence nanoscopy with optical sectioning by two-photon induced molecular switching using continuous-wave lasers显示文摘	Folling J Belov V Riedel D	2008	Chemphyschem2008，9，：	1
	8	Metformin increases total serum homocysteine levels in non-diabetic male patients with coronary heart disease显示文摘	Carlsen SM Folling I Grill V	1997	Scand J Clin Lab Invest1997，57，：	1
	9	Formation mechanism and properties of electrochemically etched trenches in n-type silicon 显示文摘	LEHMANN V FOLL H	1990	J Electrochem Soc1990，137，2：	1
	10	Formation mechanism and properties of electrochemically etched trenches in ntype显示文摘	Lehmann V Foll H	1990	J Electrochem Soc1990，137，：	1
	11	Metformin increases total serum homocysteine levels in non-diabetic male patients with coronary heart disease显示文摘	Carlsen SM Folling I Grill V	1997	Scand J Clin Lab Invest1997，57，：	1
	12	Distribution of breakpoints induced by etoposide and X-rays along the CHO X chromosome 显示文摘	Martitute-Lopez W Folle G A Cassina G Mendez-Acufla L Di-Tomaso M V Obe G	2004	Cytogenet Genome Res2004，104，：	1
	13	Formation mechanism and properties of electrochemically etched trenches in n-type silicon显示文摘	Lehmann V Foll H	1990	J Electrochem Soc1990，137，2：	1
	14	Development of three-dimensional microstructure processing using macroporous n-type silicon显示文摘	Ottow S Lehmann V Foll H	1996	Appl Phys A:Mater Sci Process1996，63，2：	1
	15	Formation mechanism and properties of electrochemically etched trenches in n-type silicon 显示文摘	LEHMANN V FOLL H	1990	J Electrochem Soc1990，137，2：	1

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