| 3 | Bulk-Si photonics technology for DRAM interface[Invited]显示文摘We present photonics technology based on a bulk-Si substrate for cost-sensitive dynamic random-access memory(DRAM)optical interface application.We summarize the progress on passive and active photonic devices using a local-crystallized Si waveguide fabricated by solid phase epitaxy or laser-induced epitaxial growth on bulk-Si substrate.The process of integration of a photonic integrated circuit(IC)with an electronic IC is demonstrated using a 65 nm DRAM periphery process on 300 mm wafers to prove the possibility of seamless integration with various complementary metal-oxide-semiconductor devices.Using the bulk-Si photonic devices,we show the feasibility of high-speed multidrop interface:the Mach–Zehnder interferometer modulators and commercial photodetectors are used to demonstrate four-drop link operation at 10 Gb∕s,and the transceiver chips with photonic die and electronic die work for the DDR3 DRAM interface at 1.6 Gb∕s under a 1∶4 multidrop configuration. | Hyunil Byun Jinkwon Bok Kwansik Cho Keunyeong Cho Hanmei Choi Jinyong Choi Sanghun Choi Sangdeuk Han Seokyong Hong Seokhun Hyun TJJeong Ho-Chul Ji In-Sung Joe Beomseok Kim Donghyun Kim Junghye Kim Jeong-Kyoum Kim Kiho Kim Seong-Gu Kim Duanhua Kong Bongjin Kuh Hyuckjoon Kwon Beomsuk Lee Hocheol Lee Kwanghyun Lee Shinyoung Lee Kyoungwon Na Jeongsik Nam Amir Nejadmalayeri Yongsang Park Sunil Parmar Junghyung Pyo Dongjae Shin Joonghan Shin Yong-hwack Shin Sung-Dong Suh Honggoo Yoon Yoondong Park Junghwan Choi Kyoung-Ho Ha Gitae Jeong | 2014 | Photonics Research2014，2，3： | 0 |
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