|
|
|
题名
|
作者
|
年代
|
出处
|
被引量
|
| 1 | Status and direction of communication technologies SiGe BiCMOS and RFCMOS 显示文摘 | Joseph A J Harame D L Jagannathan B | 2005 | Proc the IEEE2005，93，9： | 1 |
| 2 | The early history of IBM's SiGe mixed signal technology 显示文摘 | Harame D L Meyerson B S | 2001 | IEEE Trans Elec Dev2001，48，11： | 1 |
| 3 | Si/SiGe epitaxial-base transistors-part I: materials, physics and circuits 显示文摘 | HARAME D L COMFORT J H CRESSLER J D | 1995 | IEEE TED1995，42，3： | 1 |
| 4 | Si/SiGe epitaxial base transistors - Part I: materials, physics, and circuits 显示文摘 | HARAME D L CRESSLER J D CRABBE E F | 1995 | IEEE Trans Elec Dev1995，42，3： | 1 |
| 5 | Si/SiGe epitaxial-base transistor-part 1:materials,physics,and circuits 显示文摘 | Comfort J H Cressler J D | 1995 | IEEE Electron Devices1995，42，3： | 1 |
| 6 | Graded SiGe-base, poly emitter heterojunction bipolar transistors 显示文摘 | Patton G L Harame D L Stork J M C | 1989 | IEEE Elee Dev Lett1989，10，12： | 1 |
| 7 | Si/SiGe epotaxial-base transistors-part I 显示文摘 | | 1995 | IEEE electron devices1995，42，3： | 1 |
| 8 | Recurrent respiratory papillomatosis: altered CD8 + T-cell subsets and T(H) 1/(H) 2 cytokine imbalance显示文摘 | Bonaura VR Haram L de-Voti J | 1999 | Clin Immunol1999，93，3： | 1 |
| 9 | Current status and future trends of SiGe BiCMOS technology 显示文摘 | Harame D L | 2001 | IEEE Transactions on Electron Devices2001，，48： | 1 |
| 10 | Si/SiGe epitaxial-base transistors - Part Ⅱ : Process Integration and Analog Applications 显示文摘 | Harame D L Comfort J H Cressler J D | 1995 | IEEE Trans Elec Dev1995，42，30： | 1 |
| 11 | Current status and future trends of SiGe BiCMOS technology 显示文摘 | Harame D L Ahlgren D C Coolbaugh D D | 2001 | IEEE Trans Elec Dev2001，48，11： | 1 |
| 12 | Current Status and Future Trends of SiGe BiCMOS Technology显示文摘 | Harame D L Ahlgren D C Coolbaugh D D | 2001 | IEEE Transaction on Electron Device2001，48，11： | 1 |
| 13 | Graded-SiGe-base, poly-emitter heterojunction bipolar transistors 显示文摘 | Patton G L Harame D L Stork J M C | 1989 | IEEE Elec Dev Lett1989，10，12： | 1 |
| 14 | Current status and future trends of SiGe BiCMOS technology显示文摘 | Harame D L Ahlgren D C Coolbaugh D D | 2001 | IEEE Trans Electron Devices2001，48，11： | 1 |
| 15 | A randomizedtrial comparing long-term and short-term use of umbilical venouscatheters in premature infants with birth weights of less than 1251grams显示文摘 | Butler-0 * HaraM Buzzard GJ Reubens L | 2006 | Pediatrics2006，118，1： | 1 |
| 16 | Si/SiGe epitaxial-base transistors-part Ⅰ: materials,physics, and circuits 显示文摘 | Harame D L Comfort J H Cressler J K | 1995 | IEEE Trans Elec Dev1995，42，3： | 1 |
| 17 | The Early history of IBM's SiGe mixed signal technology 显示文摘 | Harame D L Meyerson B S | 2001 | IEEE Elec Dev2001，48，11： | 1 |
| 18 | Temperature dependence of Q and inductance in spiral inductors fabricated in a silicon-germanium/BiCMOS technology显示文摘 | GROVES R HARAME D L JADUS D | 1997 | IEEE J Solid-State Circuits1997，32，9： | 1 |
| 19 | Fluid flow phenomena from 4D interpretation, Heidrun Field, Norwegian North Sea显示文摘 | Kahar Y Anno P D Haram L G | 2006 | Expanded Abstracts of 76^th Annual International SECT Meeting2006，，： | 1 |
| 20 | Si/ SiGe Epitaxial base transistor-part Ⅱ : process integration and analog applications 显示文摘 | Harame D L Comfort J H Cressler J D | 1995 | IEEE Transactions on Electron Devices1995，42，3： | 1 |
您所在的机构暂未开通此部分的功能，请联系管理员