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102篇 您的检索式：作者名="Hefner R"

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	题名	作者	年代	出处	被引量
1	IGBT Model Validation 显示文摘	Hefner A R	1998	IEEE Industry Application Magazine1998，12，：	1
2	Cytochrome P450-catalyzed hydroxylation of taxa-4(5),11(12)-diene to taxa-4(20),11(12)-dien-5-alpha-ol:The first oxygenation step in Taxol biosynthesis显示文摘	HEFNER J RUBENSTEIN S M KETCHUM R E B	1996	Chem Bio1996，3，：	1
3	Dynamic electro-thermal model for the IGBT显示文摘	Hefner A R	1994	IEEE Transactions on Industry Applications1994，30，2：	1
4	An Investigation of the drive circuit requirements for the power insulated gate bipolar transistor (IGBT)显示文摘	Hefner A R	1991	IEEE Transactions on Power Electronics1991，6，2：	1
5	An experimentally verified IGBT model implemented in saber circuit simulator显示文摘	Hefner A R Diebolt D M	1994	IEEE Transactions on Power Electronics1994，9，5：	1
6	Modeling buffer layer IGBTs for circuit simulation显示文摘	Hefner A R	1995	IEEE Transactions on Power Electronics1995，10，2：	1
7	An experimentally verified IGBT model Implemented in saber circuit simulator显示文摘	HEFNER A R DIEBOLT D M	1994	IEEE Transac- tions on Power Electronics1994，9，5：	1
8	Characterization of power electronics system interconnect parasitics using time domain reflectometry显示文摘	Zhu H-B Hefner A R Lai J-S	1999	IEEE Trans Power Electronics1999，14，4：	1
9	An investigation of the drive circuit re- quirements for the power insulated gate bipolar tran- sistor (IGBT) 显示文摘	HEFNER A R	1991	IEEE Transactions on Power Elec-tronies1991，6，2：	1
10	Fracture behaviour of liquid crystal epoxy resin systems based on the diglycidyletherof 4, 4'-dihydroxy-a-methylstilbene and sulphanilamide显示文摘	Sue H J Earls J D Hefner R E	1997	Ma- ter Sci1997，32，10：	1
11	An analytical model for the steady-state and transient characteristics of the power insulate gate bipolar transistor 显示文摘	Allen R Hefner David R Blackburn	1988	Solid-State Electron1988，31，10：	1
12	Analytical modeling of device-circuit interactions for the power insulated gate bipolar tran- sistor (IGBT)显示文摘	HEFNER A R	1990	IEEE Transactions on Industry Ap- plications1990，26，6：	1
13	Experimentally veri- fied IGBT model implemented in the Saber circuit simulator 显示文摘	HEFNER A R DIEBOLT D M	1994	IEEE Transactions on Power Electron- ics1994，9，5：	1
14	The Age of Energy Gases 显示文摘	Hefner III R A	2002	International Journal of Hydrogen Energy2002，27，1：	1
15	An analytical model for the steady-state and transient characteristics of the power insulate gate bipolar transistor显示文摘	Hefner A R Blackburn D L	1988	Solid-State Electronics1988，31，10：	1
16	Electro-thermal simulation of an IGBT PWM inverters显示文摘	MANTOOTH H A HEFNER A R J		0，，03：	1
17	Characterization of power electronics system interconnect parasitics using time domain reflectometry 显示文摘	ZHU Hui-bin HEFNER A R LAI J S	1999	IEEE Transactions on Power Electronics1999，14，4：	1
18	Failure dynamics of the IGBT during turn-off for unclamped inductive loading conditions 显示文摘	Shen C-C Hefner R Berning W	2000	IEEE Trans Industry Application2000，36，2：	1
19	Electro thermal simulation of an IGBT PWM inverter显示文摘	Mantooth H A Hefner A R	1997	IEEE Transaction on Power Electronics1997，12，3：	1
20	Dynamic electro-thermal model for the IGBT显示文摘	Hefner A R	1994	IEEE Transactions on Industry Applications1994，30，2：	1

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