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| 1 | Synthesis and Antitumor Activity of 4-tert-Butyl-5-benzyl-2-benzyliminothiazoles显示文摘 | YE Jiao QIU Shenyi HU Aixi PENG Junmei QIN Zhi | 2014 | Chemical Research in Chinese Universities2014，30，1： | 1 |
| 2 | Pillar[5]arene-based [3]rotaxanes: Convenient construction via multicomponent reaction and pH responsive self-assembly in water显示文摘Four pillar[5]arene based[3]rotaxanes(1-4)involving two 1,4-diethoxypillar[5]arene(DEP5)rings and a dumbbell-shaped component were successfully synthesized.The dumbbell-shape molecules contain one longer bridge,two triazole sites and two multicomponent stoppers.After threading DEP5 rings with linear guests(G1-G4)which contain two benzaldehyde units,the base catalyzed three-component reaction of dimedone,malononitrile and benzaldehyde was performed to construct the stoppers and connected the pseudorotaxanes with stoppers to generate 1-4.The structures of[3]rotaxanes and their self-assembly behaviors were characterized by 1 H NMR,13C NMR,NOESY,HR-ESI-MS,DLS and TEM technologies.We hope that pillar[5]arene based[3]rotaxanes may have potential applications in drug delivery systems and molecular devices. | Junmei Ye Runmiao Zhan Wenjuan Yang Ying Han Hao Guo Ju Xie Chaoguo Yan Yong Yao | 2020 | Chinese Chemical Letters2020，31，6： | 1 |
| 3 | A novel six-transmembrane protein hhole functions as a suppressor in MAPK signaling pathways显示文摘 | Junmei Zhou Yongqing Li Pei Liang Wuzhou Yuan Xiangli Ye Chuanbing Zhu Yingduan Cheng Yuequn Wang Guan Li Xiushan Wu Mingyao Liu | 2005 | Biochemical and Biophysical Research Communications2005，，2： | 1 |
| 4 | Rapid and sensitive determination of strychnine and brucine in human urine by capillary electrophoresis with field-amplifield sample stacking显示文摘 | Junmei Li Ye Jiang | 2010 | Biomed Chromatography2010，10，： | 1 |
| 5 | Lateral polarity control ofⅢ-nitride thin film and application in GaN Schottky barrier diode显示文摘N-polar and Ⅲ-polar GaN and AlN epitaxial thin films grown side by side on single sapphire substrate was reported.Surface morphology,wet etching susceptibility and bi-axial strain conditions were investigated and the polarity control scheme was utilized in the fabrication of Schottky barrier diode where ohmic contact and Schottky contact were deposited on N-polar domains and Ga-polar domains,respectively.The influence of N-polarity on on-state resistivity and Ⅰ–Ⅴ characteristic was discussed,demonstrating that lateral polarity structure of GaN and AlN can be widely used in new designs of optoelectronic and electronic devices. | Junmei Li Wei Guo Moheb Sheikhi Hongwei Li Baoxue Bo Jichun Ye | 2018 | Journal of Semiconductors2018，39，5： | 0 |
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