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| 1 | Improved performance of UVC-LEDs by combination of high-temperature annealing and epitaxially laterally overgrown AlN/sapphire显示文摘We report on the performance of AlGaN-based deep ultraviolet light-emitting diodes(UV-LEDs)emitting at 265 nm grown on stripe-patterned high-temperature annealed(HTA)epitaxially laterally overgrown(ELO)aluminium nitride(AIN)/sapphire templates.For this purpose,the structural and electro-optical properties of ultraviolet-c light-emitting diodes(UVC-LEDs)on as-grown and on HTA planar AlN/sapphire as well as ELO AlN/sapphire with and without HTA are investigated and compared.Cathodoluminescence measurements reveal dark spot densities of 3.5×10^9 cm^-2,1.1×10^9 cm^-2,1.4×10^9 cm^-2,and 0.9×10^9 cm^-2 in multiple quantum well samples on as-grown planar AIN/sapphire,HTA planar AlN/sapphire,ELO AlN/sapphire,and HTA ELO AlN/sapphire,respectively,and are consistent with the threading dislocation densities determined by transmission electron microscopy(TEM)and high-resolution X-ray diffraction rocking curve.The UVC-LED performance improves with the reduction of the threading dislocation densities(TDDs).The output powers(measured on-wafer in cw operation at 20 mA)of the UV-LEDs emitting at 265 nm were 0.03 mW(planar AlN/sapphire),0.8 mW(planar HTA AlN/sapphire),0.9 mW(ELO AlN/sapphire),and 1.1 mW(HTA ELO AlN/sapphire),respectively.Furthermore,Monte Carlo ray-tracing simulations showed a 15%increase in light-extraction efficiency due to the voids formed in the ELO process.These results demonstrate that HTA ELO AlN/sapphire templates provide a viable approach to increase the efficiency of UV-LEDs,improving both the internal quantum efficiency and the light-extraction efficiency. | NORMAN SUSILO EVIATHAR ZIFFER SYLVIA HAGEDORN LEONARDO CANCELLARA CARSTEN NETZEL NEYSHA LOBO PLOCH SHAOJUN WU JENS RASS SEBASTIAN WALDE LUCA SULMONI MARTIN GUTTMANN TIM WERNICKE MARTIN ALBRECHT MARKUS WEYERS MICHAEL KNEISSL | 2020 | Photonics Research2020，8，4： | 4 |
| 2 | Electrical properties and microstructure formation of V/Al-based n-contacts on high Al mole fraction n-AlGaN layers显示文摘The electrical and structural properties of V/Al-based n-contacts on n‐AlxGa1−xN with an Al mole fraction x ranging from x=0.75 to x=0.95 are investigated.Ohmic n-contacts are obtained up to x=0.75 with a contact resistivity of 5.7×10^−4Ω·cm^2 whereas for higher Al mole fraction the IV characteristics are rectifying.Transmission electron microscopy reveals a thin crystalline AlN layer formed at the metal/semiconductor interface upon thermal annealing.Compositional analysis confirmed an Al enrichment at the interface.The interfacial nitride-based layer in n-contacts on n‐Al0.9Ga0.1N is partly amorphous and heavily contaminated by oxygen.The role and resulting limitations of Al in the metal stack for n-contacts on n-AlGaN with very high Al mole fraction are discussed.Finally,ultraviolet C(UVC)LEDs grown on n‐Al0.87Ga0.13N and emitting at 232 nm are fabricated with an operating voltage of 7.3 V and an emission power of 120μW at 20 mA in cw operation. | LUCA SULMONI FRANK MEHNKE ANNA MOGILATENKO MARTIN GUTTMANN TIM WERNICKE MICHAEL KNEISSL | 2020 | Photonics Research2020，8，8： | 4 |
| 3 | Current-induced degradation and lifetime prediction of 310 nm ultraviolet light-emitting diodes显示文摘The impact of operation current on the degradation behavior of 310 nm UV LEDs is investigated over 1000 h of stress. It ranges from 50 to 300 mA and corresponds to current densities from 34 to 201 A/cm^2.To separate the impact of current from that of temperature, the junction temperature is kept constant by adjusting the heat sink temperature. Higher current was found to strongly accelerate the optical power reduction during operation. A mathematical model for lifetime prediction is introduced.It indicates that lifetime is inversely proportional to the cube of the current density, suggesting the involvement of Auger recombinati on. | Jan Ruschel Johannes Glaab Batoul Beidoun Neysha Lobo Ploch Jens Rass Tim Kolbe Arne Knauer Markus Weyers Sven Einfeldt Michael Kneissl | 2019 | Photonics Research2019，7，7： | 3 |
| 4 | A Rice Phytochrome A in Arabidopsis: The Role of the N-terminus under red and far-red light显示文摘phytochrome (phy ) A 和 phyB 光敏电阻器调停在植物的三个 photobiological 反应模式;而 phyA 能调停, very-low-fluence 反应(VLFR ) ,对某程度的高发光的反应(HIR ) 并且,,低 fluence 反应(LFR ) , phyB 和另外的类型 II phytochromes 仅仅调停 LFR。为了调查到铺平米饭 phyA 的,能为 Arabidopsis phyA 或 phyB 功能并且到补充在 phyA 的N终点的开始的 20 氨基酸评估丝氨酸残余的角色,我们检验了 VLFR , LFR ,并且在 phyB 和 phyAphyB 异种植物的 HIR 回答与开始的 10 丝氨酸残余在被变异到丙氨酸( phyA SA )的米饭 PHYA cDNA 或变异的米饭 PHYA cDNA 转变了。没有内长的 phyB,利用异种允许米饭 phyA 察觉到的 red-light-derived 回答的评估。在摘要, WT 米饭 phyA 能在 FR 或连续 R 光的脉搏下面补充象胚轴延伸的抑制那样的 VLFR 和 LFR 回答, flowering 和叶扩大感应,而 phyA SA 为 HIR 回答是更特定的(例如胚轴的抑制,在连续 far-red 下面的延伸和 anthocyanin 累积点亮)。因为 N 终端丝氨酸能不再是在 phyA SA 异种的 phosphorylated,这为在不同 phyA 依赖的回答之间区别的 phosphorylation 建议一个角色。在 Arabidopsis 表示的米饭 phyA 的功效依赖于分析的植物并且在生理的反应上的发展年龄,下游地建议一个阶段依赖者 phytochrome 发信号的调整。 | Julia Kneissl Tomoko Shinomura Masaki Furuya Cordelia Bolle | 2008 | Molecular Plant2008，1，1： | 3 |
| 5 | Recombination mechanisms and thermal droop in AlGaN-based UV-B LEDs显示文摘This paper reports a comprehensive analysis of the origin of the electroluminescence(EL)peaks and of the thermal droop in UV-B AlGaN-based LEDs.By carrying out spectral measurements at several temperatures and currents,(i)we extract information on the physical origin of the various spectral bands,and(ii) we develop a novel closed-form model based on the Shockley–Read–Hall theory and on the ABC rate equation that is able to reproduce the experimental data on thermal droop caused by non-radiative recombination through deep levels.In the samples under test,the three EL bands are ascribed to the following processes:band-to-band recombination in the quantum wells(main EL peak),a parasitic intra-bandgap radiative transition in the quantum well barriers,and a second defect-related radiative process in the p-AlGaN superlattice. | CARLO DE SANTI MATTEO MENEGHINI DESIREE MONTI JOHANNES GLAAB MARTIN GUTTMANN JENS RASS SVEN EINFELDT FRANK MEHNKE JOHANNES ENSLIN TIM WERNICKE MICHAEL KNEISSL GAUDENZIO MENEGHESSO ENRICO ZANONI | 2017 | Photonics Research2017，5，2： | 2 |
| 6 | Separation of cis elements responsive to ethylene, fruit development, and ripening in the 5′-flanking region of the ripening-related E8 gene显示文摘 | Jill Deikman Ruiling Xu Michelle L. Kneissl Joseph A. Ciardi Kyung-Nam Kim Dan Pelah | 1998 | Plant Molecular Biology1998，，6： | 1 |
| 7 | Low-dose aspirin for secondary cardiovascular pre- vention-cardiovascular risks after its preoperative withdrawal versus bleeding risks with its continua- tion-review and meta-analysis显示文摘 | BurgerW Chemnitius J M Kneissl G D | 2005 | J Int Med2005，257，： | 1 |
| 8 | Microstructure of rapidly solidified Cu-AI-Ni shape memor,fllny ribbons 显示文摘 | Lojen G Anzel l Kneissl A | 2005 | Jnumal of Materials Processing Technolorg2005，162，： | 1 |
| 9 | Advances in group Ⅲ-nitride-based deep UV light-emitting diode technology 显示文摘 | KNEISSL M KOLBE T CHUA C | 2011 | Semicond Sci Tech2011，26，01： | 1 |
| 10 | Electrochemical and microstructural study of Cu-A1-Ni shape memory alloy 显示文摘 | GOJIC M VRSALOVI( L KOZUH S KNEISSL A ANZEL I GUDI( S KOSEC B KLISKIC M | 2011 | J Alloys Compd2011，509，： | 1 |
| 11 | Training and stability of the intrinsic two-way shape memory effect in TiNi alloys显示文摘 | KNEISSL A | 1998 | Scripta Mater1998，39，： | 1 |
| 12 | Influence of chemical composition and manufacturing conditions on properties of NiTi shape memory alloys 显示文摘 | MEHRABI K BAHMANPOUR H SHOKUHFAR A KNEISSL A | 2008 | Materials Science and Engineering A2008，，： | 1 |
| 13 | Influence of chemical composition and manufacturing conditions on properties of NiTi shape memory alloys显示文摘 | MEHRABI K BAHMANPOUR H SHOKUHFAR A KNEISSL A | | 0，，： | 1 |
| 14 | Separation of cis elements responsive to ethylene, fruit development, and ripening in the 5′-flanking region of the ripening-related E8 gene显示文摘 | Jill Deikman Ruiling Xu Michelle L. Kneissl Joseph A. Ciardi Kyung-Nam Kim Dan Pelah | 1998 | Plant Molecular Biology1998，，6： | 1 |
| 15 | Ultraviolet AIGaN multiple-quantum-well laser diodes 显示文摘 | KNEISSL M TREAT D W TEEPE M | 2003 | Appl Phys Lett2003，82，： | 1 |
| 16 | Effect of balloon vavulo- plasty for mitral stenosis on right ventricular function显示文摘 | Burger W Kneissl GD Kober G et a l | 1993 | Am J Cardiol1993，71，： | 1 |
| 17 | Low-dose aspmn for secondary cardiovascular prevention - cardiovascular risks after its perioperative withdrawal versus bleeding risks with its continuation -review and meta-analysis显示文摘 | Burger W Chemnitius JM Kneissl GD | 2005 | J Intern Med2005，257，5： | 1 |
| 18 | Low-dose aspirin for secondary cardiovascular prevention cardiovascular risks after its periopemtive withdrawal versus bleeding risks with its continuation review and meta-analysis显示文摘 | Burger W Chemnitius JM Kneissl GD | 2005 | J Intern Med2005，257，5： | 1 |
| 19 | Low-dose almitrine bismesylate in the treatment of hypoxemia due to chronic obstructive pulmonary disease显示文摘 | Winkelmann B R Kullmer T H Kneissl D G | 1994 | Chest1994，105，5： | 1 |
| 20 | 查看详情显示文摘 | Bruncko M Anzel I Kneissl A | | 0，，： | 1 |
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