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10篇 您的检索式：作者名="Kaczer B"

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		题名	作者	年代	出处	被引量
	1	Impact of MOSFET gate oxide breakdown on digital circuit operation and reliability 显示文摘	KACZER B DEGRAEVE R RASRAS M	2002	IEEE Trans Elec Dev2002，49，3：	1
	2	Analysis and modeling of a digital CMOS circuit operation and reliability after gate oxide breakdown: a case study 显示文摘	KACZER B DEGRAEVE R RASRAS M	2002	Microelec Reliab2002，42，5：	1
	3	Temperature dependence of the negative bias temperature instability in the framework of dispersive transport 显示文摘	KACZER B ARKHIPOV V DEGRAEVE R	2005	Appl Phys Lett2005，14，14：	1
	4	Dispersive transport and negative bias temperature instability: boundary condi- tions, initial conditions, and transport models 显示文摘	Grasser T Gos W Kaczer B	2008	IEEE Transactions on Device Material Reliability2008，8，1：	1
	5	Analysis and modeling of a digital CMOS circuit opera-tion and reliability after gate oxide breakdown:a casestudy显示文摘	KACZER B DEGRAEVE R RASRAS M	2002	Microelec Reliab2002，42，5：	1
	6	Im-pact of MOSFET gate oxide breakdown on digital cir-cuit operation and reliability显示文摘	KACZER B DEGRAEVE R RASRAS M	2002	IEEE Trans ElecDev2002，49，3：	1
	7	Consistent model for short-channel nMOS-FET after hard gate oxide breakdown显示文摘	KACZER B DEGRAEVE R DE KEERSGIETER AV	2002	IEEE TransElec Dev2002，49，3：	1
	8	Degradation and breakdown in thin oxide layers: mechanisms, models and reliability prediction显示文摘	DEGRAEVE R KACZER B and GROESENEKEN G	1999	Microelectronics Reliability1999，39，10：	1
	9	Statistical model for SILC and pre-breakdown current jumps in ultra-thin oxide layers显示文摘	DEGRAEVE R KACZER B SCHULER F	2001	1EDM Tech Dig2001，，：	1
	10	Channelhot carrier degradation mechanism in long/short channel n-FinFETs显示文摘	Cho M Roussel P Kaczer B	2013	IEEE Trans on Electron Devices2013，60，12：	1

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