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1篇 您的检索式：作者名="Kumsong Kim"

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		题名	作者	年代	出处	被引量
	1	β-Ga_2O_3 thin film grown on sapphire substrate by plasmaassisted molecular beam epitaxy显示文摘Monoclinic gallium oxide(Ga_2O_3) has been grown on(0001) sapphire(Al_2O_3) substrate by plasma-assisted molecular beam epitaxy(PA-MBE). The epitaxial relationship has been confirmed to be [010]( 2ˉ01) β-Ga_2O_3\|\|[ 011ˉ0](0001)Al_2O_3 via in-situ reflection high energy electron diffraction(RHEED) monitoring and ex-situ X-ray diffraction(XRD) measurement. Crystalline quality is improved and surface becomes flatter with increasing growth temperature, with a best full width at half maximum(FWHM) of XRD ω-rocking curve of( 2ˉ01) plane and root mean square(RMS) roughness of 0.68° and 2.04 nm for the sample grown at 730 °C,respectively. Room temperature cathodoluminescence measurement shows an emission at ~417 nm, which is most likely originated from recombination of donor–acceptor pair(DAP).	Jiaqi Wei Kumsong Kim Fang Liu Ping Wang Xiantong Zheng Zhaoying Chen Ding Wang Ali Imran Xin Rong Xuelin Yang Fujun Xu Jing Yang Bo Shen Xinqiang Wang	2019	Journal of Semiconductors2019，40，1：	4

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