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2篇 您的检索式：作者名="L.Blackburn"

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		题名	作者	年代	出处	被引量
	1	Lithium‐Ion Batteries: Nanostructured Fe<sub>3</sub>O<sub>4</sub>/SWNT Electrode: Binder‐Free and High‐Rate Li‐Ion Anode (Adv. Mater. 20/2010)显示文摘	ChunmeiBan ZhuangchunWu Dane T.Gillaspie LeChen YanfaYan Jeffrey L.Blackburn Anne C.Dillon	2010	Adv Mater2010，，20：	1
	2	Amplitude-mode spectroscopy of chemically injected and photogenerated charge carriers in semiconducting single-walled carbon nanotubes显示文摘In one-dimensional semiconductors such as conjugated polymers and semiconducting single-walled carbon nanotubes(s-SWCNTs),injected charge carriers(electrons or holes)can have profound impacts on both electronic conductivity and optical spectra,even at low carrier densities.Understanding charge-related spectral features is a key fundamental challenge with important technological implications.Here,we employ a systematic suite of experimental and theoretical tools to understand the mid-infrared charge signatures of heavily p-type doped polymer-wrapped s-SWCNTs.Across a broad range of nanotube diameters,we find that hole charge carriers induce strong Fano anti-resonances in mid-infrared transmission spectra that correspond to defect-related(D-band)and in-plane tangential(G-band)Raman-active vibrational modes,along with antiresonances arising from infrared(IR)-active polymer and SWCNT modes.We employ^(13)C isotope-labeled s-SWCNTs and a removable wrapping polymer to clarify the relative intensities,energies,and sources of all observed anti-resonances.Simulations performed with the“amplitude mode model”are used to quantitatively reproduce Raman spectra and also help to explain the outsized intensity of the D-band anti-resonance,relative to the G-band,observed for both moderately and degenerately doped s-SWCNTs.The results provide a framework for future studies of ground-and excited-state charge carriers in s-SWCNTs and a variety of low-dimensional materials.	Shai R。Vardeny Alan Phillips Kira A。Thurman ZValy Vardeny Jeffrey L.Blackburn	2023	Nano Research2023，16，4：	0

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