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| 1 | Recent progress and strategies toward high performance zinc-organic batteries显示文摘Energy sustainable development has stimulated the pursuit of an eco-friendly energy storage system.Carbon peak and neutrality targets oriented energy storage development will guide the way of further studies on batteries system.However,conventional batteries system(lead-acid batteries,lithium-ion batteries)based on ungreen transition metal oxide,flammable electrolytes or hazardous metals cannot keep pace with the development of society sooner or later.Thus,vast explorations on the advanced rechargeable battery systems were conducted.Compared with other battery systems,zinc ion battery systems with inherent safety,low cost were widely investigated.Especially,the zinc organic batteries based on the eco-efficiency organic cathodes were promising alternative advanced batteries for future energy storage systems.Therefore,various organics and different electrochemistry mechanisms were explored in the zinc batteries system.Herein,a timely review on elaborate analysis about functional groups,fundamentals,progress accompanied by the discussion on the four core issues:voltage,capacity,rate performance,cycle life was presented.Specifically,aiming at these issues,three levels of solution strategies:materials design concepts,morphology structure optimization and electrolyte environment were summarized and proposed for the development and innovation of zinc organic batteries. | Shibing Zheng Qiaoran Wang Yunpeng Hou Lin Li Zhanliang Tao | 2021 | Journal of Energy Chemistry2021，30，12： | 2 |
| 2 | 显示文摘 | Tian Shibing Li Lin Sun Wangning | 2012 | Scientif- ic Reports2012，2，511： | 1 |
| 3 | Composites of UHMWPE fiber reinforced PU/epoxy grafted inter- penetrating polymer networks显示文摘 | Lin Shibing Han Jingling Yeh J T | 2007 | European Polymer Journal2007，43，： | 1 |
| 4 | Hydrothermal Synthesis and Microwave Absorption Properties of Fe3O4Nanocrystals显示文摘 | Ni Shibing Lin Shumei Pan Qingtao | 2009 | Journal of Physics D:Applied Physics2009，42，05： | 1 |
| 5 | Fully Printed High‑Performance n‑Type Metal Oxide Thin‑Film Transistors Utilizing Coffee‑Ring Effect显示文摘Metal oxide thin-films transistors(TFTs)produced from solution-based printing techniques can lead to large-area electronics with low cost.However,the performance of current printed devices is inferior to those from vacuum-based methods due to poor film uniformity induced by the“coffeering”effect.Here,we report a novel approach to print highperformance indium tin oxide(ITO)-based TFTs and logic inverters by taking advantage of such notorious effect.ITO has high electrical conductivity and is generally used as an electrode material.However,by reducing the film thickness down to nanometers scale,the carrier concentration of ITO can be effectively reduced to enable new applications as active channels in transistors.The ultrathin(~10-nm-thick)ITO film in the center of the coffee-ring worked as semiconducting channels,while the thick ITO ridges(>18-nm-thick)served as the contact electrodes.The fully inkjet-printed ITO TFTs exhibited a high saturation mobility of 34.9 cm2 V^(−1) s^(−1) and a low subthreshold swing of 105 mV dec^(−1).In addition,the devices exhibited excellent electrical stability under positive bias illumination stress(PBIS,ΔV_(th)=0.31 V)and negative bias illuminaiton stress(NBIS,ΔV_(th)=−0.29 V)after 10,000 s voltage bias tests.More remarkably,fully printed n-type metal–oxide–semiconductor(NMOS)inverter based on ITO TFTs exhibited an extremely high gain of 181 at a low-supply voltage of 3 V,promising for advanced electronics applications. | Kun Liang Dingwei Li Huihui Ren Momo Zhao Hong Wang Mengfan Ding Guangwei Xu Xiaolong Zhao Shibing Long Siyuan Zhu Pei Sheng Wenbin Li Xiao Lin Bowen Zhu | 2021 | Nano-Micro Letters2021，13，11： | 1 |
| 6 | Modulation of Microstructure and Charge Transport in Polymer Monolayer Transistors by Solution Aging显示文摘A few monolayers of organic semiconductors adjacent to the dielectric layer are of vital importance in organic field-effect transistors due to their dominant role in charge transport.In this report,the 2-nm-thick polymer monolayers based on poly(3-hexylthiophene)with different molecular weights(M_(n))were fabricated using dip-coating technique.During the monolayer(solid state)formation from the solution,a disorder-to-order transition of polymer conformation is observed through UV-vis absorption measurement.Meanwhile,high Mn polymer monolayer generates higher crystalline fibrillar microstructure than the low Mn one due to the strongerπ–πintermolecular packing between polymers.More importantly,the solution aging procedure is utilized to further improve the morphology of polymer monolayers.It is obvious that after aging for 6 d,both fiber dimension and density as well as conjugation length are significantly increased under the same processing conditions in comparison to the fresh solution,and consequently the field-effect mobilities are remarkably enhanced by 2—4 times.Note that the maximum mobility of 0.027 cm2·V^(–1)·s^(–1)is among the highest reported values for poly(3-hexylthiophene)monolayer transistors.These results demonstrate a simple but powerful strategy for boosting the device performance of polymer monolayer transistors. | Xuemei Lin Ruochen Liu Chenming Ding Junyang Deng Yifu Guo Shibing Long Ling Li Mengmeng Li | 2021 | Chinese Journal of Chemistry2021，39，11： | 0 |
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