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28篇 您的检索式：作者名="Melloch"

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	题名	作者	年代	出处	被引量
1	Status and prospects for SiC power MOSFETs 显示文摘	Cooper J A Jr Melloch M R Ranbir S	2002	IEEE Transactions on Electron Devices2002，49，：	1
2	Low-Temperature Grown Ⅲ-Ⅴ Materials显示文摘	Melloch M R Woodall J M Harmon E S	1995	Annual Review of Materials Science1995，25，1：	1
3	Dopant activation and surface morphology of ion implanted 4H- and 6H-silicon carbide显示文摘	M. A. Capano S. Ryu M. R. Melloch J. A. Cooper M. R. Buss	1998	Journal of Electronic Materials1998，，4：	1
4	High-voltage double implanted power MOSFET's in 6H-SiC显示文摘	Shenoy J N Cooper Jr J A Melloch M R	1997	IEEE Electron Device Letters1997，18，3：	1
5	Effects of Na2S and (NH4)2S edge passivation treatments on the dark current voltage characteristics of GaAs pn diodes显示文摘	Carpenter M S Melloch M R Lundstrom M S	1988	Applied Physics Letters1988，52，25：	1
6	Highpower narrow-band terahertz generation using large-aperture photoconductors显示文摘	PARK S G WEINER A M MELLOCH M R	1999	IEEE J Quantum Electron1999，35，8：	1
7	High-voltage accumulation-layer UMOSFET's in 4H-SiC 显示文摘	TAN J COOPER J A MELLOCH M R	1998	IEEE Electron Devices Letters1998，19，12：	1
8	The Kondo effect in an artificial quantum dot molecule 显示文摘	Jeong H Chang A M Melloch M R	2001	Science2001，293，2：	1
9	Characteristics of inversion channel and buried channel MOS devices in 6H-SiC 显示文摘	SHEPPARD S T MELLOCH M R COOPER J A J	1994	IEEE Trans Elec Dev1994，41，7：	1
10	Analysis of Terahertz Waveforms Measured by Photoconductive and Electroooptic Sampling显示文摘	PARK SANG-GYU MICHAEL R MELLOCH	1999	IEEE Journal of Quantum Electronic1999，35，5：	1
11	Effects of Na2S and (NH4)2 S Edge Passivation Treatments on the Dark Current- Voltage Characteristics of GaAs pn Diodes 显示文摘	Carpenter M S Melloch M R Lundstrom M S	1988	Appl Phys Lett1988，52，25：	1
12	SiC power Schottky and pin diodes 显示文摘	SINGH R Jr COOPER J A MELLOCH M R	2002	IEEE Transactions on Electron Devices2002，49，4：	1
13	Experimental Demonstration of a Buried-Channel Charge-Coupled Device in 6H-SiC显示文摘	Sheppard S T Melloch M R Cooper J A Jr	1996	IEEE Electron Device Letters1996，17，1：	1
14	High power narrow-band terahertz generation using large aperture photoconduetors显示文摘	PARK S G WEINER A M MELLOCH M R	1999	IEEE J Quantum Electron1999，35，8：	1
15	Depant activation and surface morphology of ion implanted 4H-and 6H-silicon carbide显示文摘	CAPANO M A RYU S MELLOCH M R	1997	Journal of Electronic Materials1997，27，4：	1
16	The Kondo effect in an artificial dot molecule显示文摘	Jeong H Chang A M Melloch M R	2001	Science2001，293，5538：	1
17	High-voltage double-implanted power MOSFET's in 6H- SiC 显示文摘	SHENOY J N Jr COOPER J A MELLOCH M R	1997	IEEE Electron Device Letters1997，18，3：	1
18	A novel self-aligned fabrication process for microwave static induction transistors in silicon carbide 显示文摘	HENNING J P PRZADKA A MELLOCH M R	2000	IEEE Elec Dev Lett2000，21，12：	1
19	Formation of low resistivity ohmic contacts to n-type 3C-SiC 显示文摘	WANJW CAPANOM A MELLOCH M R	2002	Solid-State Electronics2002，46，8：	1
20	Monolithic NMOS Digital Integrated Circuits in 6H-SiC显示文摘	Xie W Cooper J A Melloch M R	1994	IEEE Electron Device Letters1994，15，6：	1

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