| 1 | High-performance flexible BiCMOS electronics based on single-crystal Si nanomembrane显示文摘In this work,we have demonstrated for the first time integrated flexible bipolar-complementary metal-oxide-semiconductor(BiCMOS)thin-film transistors(TFTs)based on a transferable single crystalline Si nanomembrane(Si NM)on a single piece of bendable plastic substrate.The n-channel,p-channel metal-oxide semiconductor field-effect transistors(N-MOSFETs&P-MOSFETs),and NPN bipolar junction transistors(BJTs)were realized together on a 340-nm thick Si NM layer with minimized processing complexity at low cost for advanced flexible electronic applications.The fabrication process was simplified by thoughtfully arranging the sequence of necessary ion implantation steps with carefully selected energies,doses and anneal conditions,and by wisely combining some costly processing steps that are otherwise separately needed for all three types of transistors.All types of TFTs demonstrated excellent DC and radio-frequency(RF)characteristics and exhibited stable transconductance and current gain under bending conditions.Overall,Si NM-based flexible BiCMOS TFTs offer great promises for high-performance and multifunctional future flexible electronics applications and is expected to provide a much larger and more versatile platform to address a broader range of applications.Moreover,the flexible BiCMOS process proposed and demonstrated here is compatible with commercial microfabrication technology,making its adaptation to future commercial use straightforward. | Jung-Hun Seo Kan Zhang Munho Kim Weidong Zhou Zhenqiang Ma | 2017 | npj Flexible Electronics2017，1，1： | 3 |
| 2 | Passivating contact-based tunnel junction Si solar cells using machine learning for tandem cell applications显示文摘Tandem solar cells are a key technology for exceeding the theoretical efficiency limit of single-junction cells.One of the most promising combinations is the silicon–perovskite tandem cells,considering their potential for high efficiency,fabrication on a large scale,and low cost.While most research focuses on improving each subcell,another key challenge lies in the tunnel junction that connects these subcells,significantly impacting the overall cell characteristics.Here,we demonstrate the first use of tunnel junctions using a stack of p+/n+polysilicon passivating contacts deposited directly on the tunnel oxide to overcome the drawbacks of conventional metal oxide-based tunnel junctions,including low tunneling efficiency and sputter damage.Using Random Forest analysis,we achieved high implied open circuit voltages over 700 mV and low contact resistivities of 500 mΩcm 2,suggesting fill factor losses of less than 1%abs for the operating conditions of a tandem cell. | HyunJung Park Audrey Morisset Munho Kim Hae-Seok Lee Aicha Hessler-Wyser Franz-Josef Haug Christophe Ballif | 2023 | Energy and AI2023，14，4： | 0 |
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