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25篇 您的检索式：作者名="Murarka R"

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	题名	作者	年代	出处	被引量
1	Mechanisms of copper removal during chemical mechanical polishing 显示文摘	Steigerwald J M Murarka S P Gutmann R J	1995	Journal of Vacuum Science and Technology B1995，13，6：	1
2	Chemical process in the chemical mechanical polishing of copper 显示文摘	Steigerwald J M Murarka S P Gutmann R J	1995	Materials Chemistry and Physics1995，41，3：	1
3	Lowtemperature epitaxial growth of CoGe2(001)/GaAs(100) films using the partially ionized显示文摘	MELLO K E SOSS S R MURARKA S P	1996	Applied Physics Letters1996，68，13：	1
4	Advanced multilayer metallization schemes with copper as interconnection metal显示文摘	MURARKA S P GUTMANN R J LANDFORD W A	1993	Thin Solid Film1993，236，：	1
5	Relationships between Maximum Acceleration, Maximum Velocity, Distance from Source and Local Site Conditions form Obdurately Strong Earthquake 显示文摘	Seed I-I Murarka R Lysmer J	1976	Bull Seism Soc Am1976，，66：	1
6	The addition of surfactant to slurry for polymer CMP: effects on polymer surface, removal rate and underlying Cu 显示文摘	NEIRYNCK J M YANG G R MURARKA S P	1996	Thin Solid Films1996，，：	1
7	Cyanide specia- tion in soil and groundwater at manufactured gas plant (MGP) sites显示文摘	Ghosh R S Nakles D V Murarka I P etal	2004	Environmental Engineering Science2004，21，6：	1
8	Pattern geometry effects in the chemical mechanical polishing of inlaid copper structures 显示文摘	Steigerwald J M Zirpoli R Murarka S P	1994	Journalofthe Electrochemical Society1994，141，：	1
9	Effect of copper ions in the slurry on the chemical mechanical polish rate of titanium 显示文摘	Steigerwald J M Murarka S P Gutmarm R J	1994	Journal of the Electrochemical Society1994，141，：	1
10	Chemical processes in the chemical mechanical polishing of copper 显示文摘	STEIGERWALD J M MURARKA S P GUTMANN R J	1995	Mater Chem Phys1995，41，5：	1
11	显示文摘	Steigerwald J M Zirpoli R Murarka S P	1994	J Electrochem Soc1994，141，10：	1
12	Grain growth in boron doped LPCVD polysilicon films 显示文摘	Sitaram A R Murarka S P Sheng T T	1990	J Mater Res1990，5，2：	1
13	The addition of surfacant to slurry for polymer CMP:effects on polymer surface,removal rate and underlying Cu显示文摘	Neirynck J M Yang G R Murarka S P	1996	Thin Solid Films1996，，：	1
14	Mechanisms of copper removal during chemical mechanical polishing 显示文摘	Steigerwald J M Murarka S P Gutmann R J	1995	Journal of Vacuum Science and Technology B1995，13，6：	1
15	Chemical process in the chemical mechanical polishing of copper显示文摘	Steigerwald J M Murarka S P Gutmann R J	1995	Materials Chemistry and Physics1995，41，：	1
16	Anaerobic fermentation of glycerol by Escherichia coli: A new platform for metabolic engineering显示文摘	Dharmadi Y Murarka A Gonzalez R	2006	Biotech Bioeng2006，94，：	1
17	显示文摘	Steigerwald J M Zirpoli R Murarka S P	1994	JElectrochem Soc1994，141，10：	1
18	Chemical processes in the chemical mechanical polishing of copper 显示文摘	STEIGERWALD J M MURARKA S P GUTMANN R J	1995	Mater Chem Phys1995，41，：	1
19	The addition of surfactant to slurry for polymer CMP:effects on polymer surface,removal rate and underlying Cu显示文摘	Shyam G R Murarka P	1997	ThinSolid Films1997，，：	1
20	Diffusion and viscosity in a supercooled polydisperse system显示文摘	Murarka R K Bagchhi B	2003	Physical Review E2003，67，05：	1

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