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11篇 您的检索式：作者名="Narihiro M"

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		题名	作者	年代	出处	被引量
	1	Thermal degradation and flame retardancy of Ethylene-vinyl alcohol copolymer blended with ammonium polyphosphate显示文摘	Narihiro M Hiroaki S		0，，：	1
	2	Thermal degradation and flame retardancy of ethylene-vinyl alcohol copolymer blended with ammonium polyphosphate显示文摘	Narihiro M Hiroaki S	2003	Polym Degrad Stab2003，79，：	1
	3	Sub-50 nm physical gate length CMOS technology and beyond using steep halo显示文摘	Wakabayashi H Ueki M Narihiro M	2002	IEEE Trans Electron Devices2002，49，1：	1
	4	Thermal degradation and flame retardancy of ethylene-vinyl alcohol copolymer blended with ammonium polyphosphate显示文摘	Narihiro M Hiroaki S Keisuke T	2003	Polymer Degradation and Stability2003，79，1：	1
	5	The nexus of syn- trophy-associated microbiota in anaerobic digestion revealed by long-term enrichment and community survey 显示文摘	Narihiro T Nobu M K Kim N	2015	Envi- ronmental Microbiology2015，17，5：	1
	6	Sub-50-nm physical gate length CMOS technology and beyond using steep halo显示文摘	Wakabayashi H Ueki M Narihiro M	2002	IEEE Transactions on Electron Devices2002，49，1：	1
	7	Resonant tunneling of electrons via 20 nm scale InAs quantum dot and magnetotunneling spectroscopy of its electronic states显示文摘	NARIHIRO M YUSA G NAKAMURA Y	1997	Applied Physics Letters1997，70，1：	1
	8	Sub-50nm physical gate length CMOS technology and beyond using steep halo 显示文摘	Wakabayashi H Ueki M Narihiro M	2002	IEEE Trams Elec Dev2002，49，1：	1
	9	Synthesis of polythiophene derivatives bearing ferroeleetrie liquid crystalline substituents 显示文摘	Goto H Dai X M Narihiro H	2004	Macromolecules2004，37，：	1
	10	Sub-50 nm physical gate length CMOS technology and beyond using steep halo显示文摘	Wakabayashi H Ueki M Narihiro M	2002	IEEE Trans Electron Devices2002，49，1：	1
	11	Resonant tunneling of electrons via 20 nm scale InAs quantum dot and magnetotunneling spectroscopy of its electronic states显示文摘	Narihiro M Yusa G Nakamura Y		0，，01：	1

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