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13篇 您的检索式：作者名="ONTIVEROS C"

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		题名	作者	年代	出处	被引量
	1	Use of Airborne LiDAR and Aerial Photography in the Estimation of Individual Tree Heights in Forestry 显示文摘	SUAREZ J C ONTIVEROS C SMITH S	2005	Computers & Geosciences2005，31，2：	1
	2	Simulated microgravity suppresses osteoblast phenotype, Runx2 levels and AP-1 transactivation显示文摘	Ontiveros C Mccabe LR	2003	J Cell Biochem2003，88，3：	1
	3	Hypoxia suppresses runx2 independent of modeled microgravity 显示文摘	Ontiveros C Irwin R Wiseman R W	2004	Cell Physiol2004，200，：	1
	4	Use of airborne LiDAR and aerial photography in the estimation of individual tree heights in forestry 显示文摘	SUAREZ J C ONTIVEROS C SMITH S	2005	Computer Geosci2005，31，2：	1
	5	Hypoxia suppresses Runx2 independent of modeled microgravity显示文摘	ONTIVEROS C IRWIN R WISEMAN R W	2004	Cell Physiol2004，200，2：	1
	6	Use of airborne LiDAR and aerial photography in the estimation of individual tree heights in forestry显示文摘	SUAREZ J C ONTIVEROS C SMITH S	2005	Computers & Geosciences2005，31，：	1
	7	Simulated microgravity suppresses osteoblast phenotype,runx2 levels and AP-1 transactivation显示文摘	Ontiveros C McCabe LR		0，，：	1
	8	Use of airborne LiDAR and aerial photography in the estimation of individual tree heights in forestry显示文摘	SUAREZ J C ONTIVEROS C SMITH S	2005	Computers & Geoscierwes2005，31，：	1
	9	Use of airborne LiDAR and aerial photography in the estimation of indi- vidual tree heights in forestry显示文摘	Suarez J C Ontiveros C Smith S	2005	Computers & Geosci- ences2005，31，2：	1
	10	Efficacy of S-adenosyl-L-methionine in speeding the onset of action of imipramine显示文摘	Berlanga C Ortega-Soto HA Ontiveros M		0，，03：	1
	11	How we will treat chronic myeloid leukemia in 2016显示文摘	Talati C Ontiveros EP Griffiths EA	2015	Blood Rev2015，29，2：	1
	12	Simulated microgravity suppresses osteoblast phenotype, Runx2 levels and AP-1 transactivation 显示文摘	Ontiveros C McCabe L R	2003	J Cell Biochem2003，88，：	1
	13	GaAsSb/InAlAs PA DHBTs Grown by Production MBE显示文摘The epi material growth of GaAsSb based DHBTs with InAlAs emitters are investigated using a 4×100mm multi-wafer production Riber 49 MBE reactor fully equipped with real-time in-situ sensors including an absorption band edge spectroscope and an optical-based flux monitor.The state-of-the-art hole mobilities are obtained from 100nm thick carbon-doped GaAsSb.A Sb composition variation of less than ±0.1 atomic percent across a 4×100mm platen configuration has been achieved.The large area InAlAs/GaAsSb/InP DHBT device demonstrates excellent DC characteristics,such as BV_CEO>6V and a DC current gain of 45 at 1kA/cm2 for an emitter size of 50μm×50μm.The devices have a 40nm thick GaAsSb base with p-doping of 4.5×1019cm-3.Devices with an emitter size of 4μm×30μm have a current gain variation less than 2% across the fully processed 100mm wafer.f_t and f_max are over 50GHz,with a power efficiency of 50%,which are comparable to standard power GaAs HBT results.These results demonstrate the potential application of GaAsSb/InP DHBT for power amplifiers and the feasibility of multi-wafer MBE for mass production of GaAsSb-based HBTs.	Pinsukanjana P Vargason K Herrera M Ontiveros D Boehme C	2006	Journal of Semiconductors2006，27，4：	0

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