|
|
|
题名
|
作者
|
年代
|
出处
|
被引量
|
| 1 | Total ionizing radiation effects of 2-T SONOS for 130 nm/4 Mb NOR flash memory technology显示文摘In this paper,we have studied the total ionizing dose(TID)radiation response up to 2 Mrad(Si)of silicon-oxide-nitride-oxide-silicon(SONOS)memory cells and memory circuits,fabricated in a 130 nm complimentary metal-oxide-semiconductor(CMOS)SONOS technology.We explored the threshold voltage(VT)degradation mechanism and found that the VT shifts of SONOS cells depend on the charge state;simply programming the cell to a higher VT cannot compensate for the radiation induced VT loss.The off-state current(Ioff)increase in the SONOS cell is also studied in this paper.Both VT and Ioffdegradation would affect the memory system.Read data failures are mainly caused by VT shifts under irradiation,and program and erase failures are mainly caused by increased Ioff,which overloads the charge pumping circuit.By varying the reference current,our 4 Mb NOR flash chip has the potential to survive a radiation dose of 1 Mrad(Si)in read mode. | QIAO FengYing PAN LiYang YU Xiao MA HaoZhi WU Dong XU Jun | 2014 | Science China(Information Sciences)2014，57，6： | 3 |
| 2 | Reliability and Availability Models of Belt Drive Systems Considering Failure Dependence显示文摘Conventional reliability models of belt drive systems in the failure mode of fatigue are mainly based on the static stress strength interference model and its extended models, which cannot consider dynamic factors in the operational duration and be used for further availability analysis. In this paper, time-dependent reliability models, failure rate models and availability models of belt drive systems are developed based on the system dynamic equations with the dynamic stress and the material property degradation taken into account. In the proposed models, dynamic failure dependence and imperfect maintenance are taken into consideration. Furthermore, the issue of time scale inconsistency between system failure rate and system availability is proposed and addressed in the proposed system availability models. Besides, Monte Carlo simulations are carried out to validate the established models. The results from the proposed models and those from the Monte Carlo simulations show a consistency. Furthermore, the case studies show that the failure dependence, imperfect maintenance and the time scale inconsistency have significant influences on system availability. The independence assumption about the belt drive systems results in underestimations of both reliability and availability. Moreover, the neglect of the time scale inconsistency causes the underestimate of the system availability. Meanwhile, these influences show obvious time-dependent characteristics. | Peng Gao Liyang Xie Jun Pan | 2019 | Chinese Journal of Mechanical Engineering2019，32，2： | 1 |
| 3 | A 1G-cell floating-gate NOR flash memory in 65 nm technology with 100 ns random access time显示文摘A 1G-cell NOR flash memory chip has been designed and fabricated successfully with 65 nm technology. To compromise the array efficiency and chip speed, the paper establishes an array model including parasitics of the whole array, and optimizes the sector structure as 512 wordlines(WLs) and 4096 bitlines(BLs).Furthermore, by adding other models of long and thin metal lines, we have analyzed the speed of critical circuit nodes. As a result, the agreement of WL delay between simulation and measurement verifies the accuracy of the array model and lines models. The test results indicate that the chip achieves random access time of 100 ns and page read time of 25 ns under 3.3 V voltage supply. | LIU LiFang WU Dong LIU XueMei HUO ZongLiang LIU Ming PAN LiYang | 2015 | Science China(Information Sciences)2015，58，4： | 1 |
| 4 | Low voltage and low current flash memory using source induced band-to-band tunneling hot electron injection to perform programming显示文摘 | PAN Liyang ZHU Jun LIU Kai | 2003 | Japanese J Applied Physics2003，42，20： | 1 |
| 5 | Novel p-channel selected n-channel divided bit-line NOR flash memory using source induced band-to-band hot-electron injection programming显示文摘 | PAN Liyang ZHU Jun LIU Kai | 2002 | Chinese Journal of Semiconductor2002，23，10： | 1 |
| 6 | A 65-nm 1-Gb NOR floating-gate flash memory with less than 50-ns access time显示文摘This paper presents a 65-nm 1-Gb NOR-type floating-gate flash memory,in which the cell device and chip circuit are developed and optimized.In order to solve the speed problem of giga-level NOR flash in the deep submicron process,the models of long bit-line and word-line are first given,by which the capacitive and resistive loads could be estimated.Based on that,the read path and key modules are optimized to enhance the chip access property and reliability.With the measurement results,the flash memory cell presents good endurance and retention properties,and the macro is operated with 1-ls/byte program speed and less than 50-ns read time under 3.3 V supply. | Yu Wang Zongliang Huo Huamin Cao Ting Li Jing Liu Liyang Pan Xing Zhang Yun Yang Shenfeng Qiu Hanming Wu Ming Liu | 2014 | Chinese Science Bulletin2014，59，29： | 0 |
| 7 | LSB page refresh based retention error recovery scheme for MLC NAND Flash显示文摘NAND Flash memories present inevitable decline in reliability due to scaling down and multilevel cell(MLC) technology. High retention error rate in highly program/erase(P/E) cycled blocks induces stronger ECC requirement in system, causing higher spare bits cost and hardware overhead. In this paper, a least significant bit(LSB) page refresh based retention recovery scheme is proposed to improve the retention reliability of highly scaled MLC NAND Flash. As in the scheme, LSB page refresh operation induces floating gate electron re-injection to compensate charge leakage during long retention time, and realizes retention error rate reduction. Experiment result on 2x-nm MLC NAND Flash exhibits more than 78% retention error rate reduction. Compared with reported retention error recovery scheme, the proposed scheme presents 2.5 times recovery efficiency promotion and 60% latency reduction. | Haozhi MA Lifang LIU Liyang PAN Jun XU | 2016 | Science China(Information Sciences)2016，59，4： | 0 |
您所在的机构暂未开通此部分的功能，请联系管理员