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24篇 您的检索式：作者名="Palmour"

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	题名	作者	年代	出处	被引量
1	6H silicon carbide MOSFET modeling for high temperature analogue integrated circuits (25 ~ 500 ℃)显示文摘	Rebello N S Shoucair F S Palmour J W	1996	IEE Proc-circuits Devices Syst1996，143，2：	1
2	6H-Silicon carbide MOSFET modeling for high temperature analogue integrated circuits (25-500 ℃)显示文摘	REBELLO N S SHOUCAIR F S PALMOUR J W	1996	IEE Proc Circ Dev Syst1996，143，2：	1
3	Insulator investigation on SiC for improved reliability显示文摘	Lori A Lipkin Palmour J W	1999	IEEE Transactions on Electron Devices1999，46，3：	1
4	Down-regulation of hepatic nicotine metabolism and a CYP2A6-like enzyme in african green monkeys after long-term nicotine administration显示文摘	Schoedel K A SELLERS E M Palmour R	2003	Molecular pharmacology2003，63，：	1
5	SiC devices with ONO stacked dielectrics显示文摘	Lipkin Lori A Palmour John W	2000	Mater Sci Forum2000，2000，：	1
6	显示文摘	Palmour J W Edmond J A Kong H S	1993	Physica B1993，185，：	1
7	6H-Silicon Carbide MOSFET modeling for high temperature analogue integrated circuits(25-500℃)显示文摘	REBELLO N S SHOUCAIR F S PALMOUR J W	1996	IEE ProCircuits Devices Syst1996，143，2：	1
8	Temperature Dependence of the Current-voltage Characteristics of Metal Semiconductor Field-effectt Ransistors in n-typeβ-SiC Grown Via Chemical Vapor Deposition 显示文摘	Kong H S Palmour J W Glass J T	1987	Appl Phys lett1987，51，6：	1
9	High-temperature Depletion-modem Etal-oxide-semiconductor Field-effect Transistors in Beta-SiC Thin Films显示文摘	Palmour J W Kong H S Davis R F	1987	Appl Phys Lett1987，51，24：	1
10	Neuronal reduction in frontal cortex of primates after prenatal alcohol exposure显示文摘	Burke MW Palmour RM Ervin FR	2009	Neuroreport2009，20，1：	1
11	SiC microwave power technologies显示文摘	Clarke R C Palmour J W	2002	Proceedings of the IEEE2002，90，6：	1
12	6H-silicon carbid devices and applications显示文摘	Palmour J W Edmond J A Kong H S		0，，：	1
13	6H-silicon carbide devices and applica-tions显示文摘	Palmour J W Edmond J A Komg H S	1993	Physica B1993，185，：	1
14	Improved oxidation procedures for reduced SiO2/SiC defects显示文摘	Lipkin L A Palmour J W		0，，05：	1
15	Temperature dependence of the current-voltage characteristics of metal-semiconductor field-effects transistors in n-type β-SIC grown via chemical vapor deposition 显示文摘	KONG H S PALMOUR J W GLASS J T	1987	Applied Physics Letters1987，51，6：	1
16	Insulator investigation on SiC for improved reliability显示文摘	Lipkin L A Palmour J W	1999	IEEE Trans Electron Devices1999，46，3：	1
17	High-temperature depletion- mode metal-oxide-semiconductor field-effect transistors in beta-SiC thin films 显示文摘	PALMOUR J W KONG H S DAVIS R F	1987	Applied Physics Letters1987，51，24：	1
18	6H-silicon carbide devices and applications 显示文摘	PALMOUR J W EDMOND J A KONG H S	1993	Physica: B1993，185，1234：	1
19	Improved Oxidationp Roce Dures for Reduced SiO2/SiC Defects 显示文摘	LIPK IN L A PALMOUR J W	1996	J Electron Mater1996，25，：	1
20	A Study on the Reliability and Stability of High Voltage 4H-SiC MOSFET Devices显示文摘	Krishnaswami Sumi Ryu Sei Hyung Heath Bradley Agarwal Anant K. Palmour John W. Geil Bruce Lelis Aivars J. Scozzie Charles J	2006	2006 (527)2006，，527：	1

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