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| 1 | Low-power emerging memristive designs towards secure hardware systems for applications in internet of things显示文摘Emerging memristive devices offer enormous advantages for applications such as non-volatile memories and inmemory computing(IMC),but there is a rising interest in using memristive technologies for security applications in the era of internet of things(IoT).In this review article,for achieving secure hardware systems in IoT,lowpower design techniques based on emerging memristive technology for hardware security primitives/systems are presented.By reviewing the state-of-the-art in three highlighted memristive application areas,i.e.memristive non-volatile memory,memristive reconfigurable logic computing and memristive artificial intelligent computing,their application-level impacts on the novel implementations of secret key generation,crypto functions and machine learning attacks are explored,respectively.For the low-power security applications in IoT,it is essential to understand how to best realize cryptographic circuitry using memristive circuitries,and to assess the implications of memristive crypto implementations on security and to develop novel computing paradigms that will enhance their security.This review article aims to help researchers to explore security solutions,to analyze new possible threats and to develop corresponding protections for the secure hardware systems based on low-cost memristive circuit designs. | Nan Du Heidemarie Schmidt Ilia Polian | 2021 | Nano Materials Science2021，3，2： | 2 |
| 2 | Elastic constants of gallium nitride 显示文摘 | POLIAN A GRIMSDITCH M GRZEGORY I | 1996 | J Appl Phys1996，79，： | 1 |
| 3 | Elastic constants of boron nitride 显示文摘 | GRIMSDITCH M ZOUBOULIS E S POLIAN A | 1994 | J Appl Phys1994，76，2： | 1 |
| 4 | Raman-scatting studies of aluminum nitride at high pressure显示文摘 | Perlin P Polian A Suski T | 1993 | Phys Rev B1993，47，： | 1 |
| 5 | Elastic moduli of H//2O:liquid,ice Ⅵ and ice Ⅶ显示文摘 | Grimsditch M Rahman A Polian A | 1984 | Materials Research Society Symposia Proceedings1984，22，： | 1 |
| 6 | Simulating resistive-bridging and stuck-at faults显示文摘 | ENGELKE P POLIAN I RENOVELL M | 2006 | IEEE Transactions on Computer-Aided Design of Integrated Circuits and Systems2006，25，10： | 1 |
| 7 | Brillouin Scattering and Three-Body Forces in Argon at High Pressures 显示文摘 | Grimsditch M Loubeyer P Polian A | 1986 | Phys Rev B1986，33，： | 1 |
| 8 | Ultrastructural changes concerning the photosynthetic apparatus during Phytophthora capsici infection of susceptible and induced pepper leaves显示文摘 | Coulomb C Polian C Lizzi Y | 1994 | Physiological and Molecular Plant Pathology1994，45，6： | 1 |
| 9 | Brillouin Scattering at High Pressure:an Overview显示文摘 | Polian A | 2003 | J Raman Spectrosc2003，34，78： | 1 |
| 10 | Hypersonic velocity measurement using Brillouin scattering technique. Application to water under high pressure and temperature显示文摘 | Frederic Decremps Frederic Datchi Alain Polian | 2006 | Ultrasonics2006，，： | 1 |
| 11 | Elastic properties of a-SiO2 up to 2 300 K from brillouin scattering measure- ments显示文摘 | POLIAN A VO-THANH D RICHET P | 2002 | Europhysics Letters2002，57，3： | 1 |
| 12 | 显示文摘 | Polian A Grimsditch M Grzegony I | 1996 | J Appl Phys1996，79，： | 1 |
| 13 | Icosahe- dral Ti-Zr-NNi and hydrogenated Ti-Zr-Ni quasicrystals under high pressure 显示文摘 | Sadoc A Itie J P Polian A Kimd J Y Kehon K F | 2000 | Materials Science and Engineering2000，294，： | 1 |
| 14 | Variation-aware fault modeling显示文摘To achieve a high product quality for nano-scale systems,both realistic defect mechanisms and process variations must be taken into account.While existing approaches for variation-aware digital testing either restrict themselves to special classes of defects or assume given probability distributions to model variabilities,the proposed approach combines defect-oriented testing with statistical library characterization.It uses Monte Carlo simulations at electrical level to extract delay distributions of cells in the presence of defects and for the defect-free case.This allows distinguishing the effects of process variations on the cell delay from defect-induced cell delays under process variations.To provide a suitable interface for test algorithms at higher levels of abstraction,the distributions are represented as histograms and stored in a histogram data base (HDB).Thus,the computationally expensive defect analysis needs to be performed only once as a preprocessing step for library characterization,and statistical test algorithms do not require any low level information beyond the HDB.The generation of the HDB is demonstrated for primitive cells in 45 nm technology. | HOPSCH Fabian BECKER Bernd HELLEBRAND Sybille POLIAN Ilia STRAUBE Bernd VERMEIREN Wolfgang WUNDERLICH Hans-Joachim | 2011 | Science China(Information Sciences)2011，54，9： | 1 |
| 15 | Optical properties of gallium selenide under high pressure显示文摘 | Gauthier M Polian A Besson J M | 1989 | Phys Rev B1989，40，： | 1 |
| 16 | New high-pressure phase of H2O: Ice X显示文摘 | Polian A Grimsditch M | 1984 | Physical Review Letters1984，52，： | 1 |
| 17 | Selective hardening: toward ost-effective error tolerance 显示文摘 | POLIAN I HAYES J P | 2011 | IEEE Transactions on Design & Test of Computers2011，28，3： | 1 |
| 18 | High-pressure behavior of the bond-bending mode of AIN 显示文摘 | Yakovenko E V Gauthier M Polian A | 2004 | J Exp Theor Phys2004，98，5： | 1 |
| 19 | Selective hardening: toward cost-effective error tolerance显示文摘 | Polian I and Hayes J P | 2011 | IEEE Design & Test of Computers2011，28，3： | 1 |
| 20 | Elastic Properties of Silicate Melts up to 2 350 K from Brillouin Scattering显示文摘 | Vo-Thanh D Polian A Richet P | 1996 | Geophys Res Lett1996，23，5： | 1 |
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