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| 1 | DNA damage triggers tubular endoplasmic reticulum extension to promote apoptosis by facilitating ER-mitochondria signaling显示文摘endoplasmic 蜂窝胃(嗯) 由原子信封, perinuclear 表和一个外部管状的网络组成。外设嗯并且线粒体形式在特定的子域的紧密的接触,它协调二个细胞器的函数并且为象 Ca 2+ 转移和 apoptosis 那样的多重细胞的进程被要求。然而,它大部分是未知的怎么嗯形态学并且嗯线粒体发信号动态地在象 DNA 那样的不同生理或病理学的条件下面被调整损坏。这里,我们证明外设,管状嗯响应 DNA 经历重要扩展损坏,和那这个过程依赖于嗯塑造蛋白质 REEP1, REEP2 和 EI24 (别名 PIG8 ) 的调停 p53 的 transcriptional 激活。这通过 EI24 和 mitochondrial 支持嗯线粒体接触的形成外部膜蛋白质 VDAC2,便于 Ca 2+ 转移从嗯到线粒体并且支持 DNA 导致损坏的 apoptosis。因此,我们识别包含改变在的一条唯一的 DNA 损坏反应小径嗯形态学,发信号的嗯线粒体,和 apoptosis。 | Pengli Zheng Qingzhou Chen Xiaoyu Tian Nannan Qian Peiyuan Chai Bing Liu Junjie Hu Craig Blackstone Desheng Zhu Junlin Teng Jianguo Chen | 2018 | Cell Research2018，28，8： | 9 |
| 2 | Quasi-two-dimensionalβ-Ga2O3 field effect transistors with large drain current density and low contact resistance via controlled formation of interfacial oxygen vacancies显示文摘Quasi-two-dimensi on al(2D)β-Ga2O3 is a rediscovered metal-oxide semiconductor with an ultra-wide bandgap of 4.6-4.9eV.It has been reported to be a promising material for next-generation power and radio frequency electronics.Field effect transistors(FETs)that can switch at high voltage are key compone nts in power and radio frequency devices,and reliable Ohmic con tacts are essential for high FET performance.However,obtaining low contact resistance onβ-Ga2O3 FETs is difficult since reactions betweenβ-Ga2O3 and metal contacts are not fully understood.Herein,we experimentally demonstrate the importanee of reactions at the metal/β-Ga2O3 interface and the corresponding effects of these reactions on FET performance.When Ti is employed as the metal contact,annealing ofβ-Ga2O3 FETs in argon can effectively transform Schottky contacts into Ohmic contacts and permit a large drain current density of-3.1 mA//μm.The contact resistance(Rcontact)between the Ti electrodes andβ-Ga2O3 decreased from^430 to^0.387Ω·mm after annealing.X-ray photoelectron spectroscopy(XPS)confirmed the formation of oxygen vacancies at the Ti/β-Ga2O3 interface after annealing,which is believed to cause the improved FET performance.The results of this study pave the way for greater application ofβ-Ga2O3 in electronics. | Zhen Li Yihang Liu Anyi Zhang Qingzhou Liu Chenfei Shen Fanqi Wu Chi Xu Mingrui Chen Hongyu Fu Chongwu Zhou | 2019 | Nano Research2019，12，1： | 2 |
| 3 | Gold-vapor-assisted chemical vapor deposition of aligned monolayer WSe2 with large domain size and fast growth rate显示文摘Orientation-controlled growth of two-dimensional(2D)transition metal dichalcogenides(TMDCs)may enable many new electronic and optical applications.However,previous studies reporting aligned growth of WSe2 usually yielded very small domain sizes.Herein,we introduced gold vapor into the chemical vapor deposition(CVD)process as a catalyst to assist the growth of WSe2 and successfully achieved highly aligned monolayer WSe2 triangular flakes grown on c-plane sapphire with large domain sizes(130μm)and fast growth rate(4.3μm·s^−1).When the aligned WSe2 domains merged together,a continuous monolayer WSe2 was formed with good uniformity.After transferring to Si/SiO2 substrates,field effect transistors were fabricated on the continuous monolayer WSe2,and an average mobility of 12 cm^2·V^−1·s−1 was achieved,demonstrating the good quality of the material.This report paves the way to study the effect of catalytic metal vapor in the CVD process of TMDCs and contributes a novel approach to realize the growth of aligned TMDC flakes. | Mingrui Chen Anyi Zhang Yihang Liu Dingzhou Cui Zhen Li Yu-Han Chung Sai Praneetha Mutyala Matthew Mecklenburg Xiao Nie Chi Xu Fanqi Wu Qingzhou Liu Chongwu Zhou Mork | 2020 | Nano Research2020，13，10： | 1 |
| 4 | Research development of platinum complexes catalyst and hydrosilylation显示文摘 | Guan Yan Wu Qingzhou Chen Guanxi | 2010 | Technology & Development of Chemical Industry2010，21，2： | 1 |
| 5 | IER: ID-ELOC-RLOC BASED ARCHITECTURE FOR NEXT GENERATION INTERNET显示文摘The scalability and mobility issues in current Internet architecture have drawn a lot of attentions from researchers. However, there are still many problems in current solutions. In this paper, we argue that three spaces, i.e., endpoint IDentifier(ID), Endpoint Locator(ELoc) and Routing Locator(RLoc), are necessary to realize two separations, i.e., separating identifier from locator and separating edge networks from the transit core. Following this argument, we design ID-ELoc-RLoc based architecture, i.e., IER, a separation approach to solve both mobility and scalability issues. After separating identifier from locator, mobile endpoints can ensure continuity of communications across IP address changes since their IDs do not change during moving. After separating edge networks from the transit core, the size and dynamics of global routing table would not be affected by traffic engineering, multi-homing, etc. in edge networks. In this paper, we introduce the definitions, framework, and implementation considerations of our IER architecture in details. | Yang Jiahai Xu Mingwei Wang Hui Chen Wenlong Yang Yuan Dong Qingzhou Wang Yang | 2014 | Journal of Electronics(China)2014，31，6： | 0 |
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