| 4 | Study on the thermal stability and electrical properties of the high-k dielectrics (ZrO_2) _x(SiO_2)_(1-x)显示文摘(ZrO2)x(SiO2)1-x (Zr-Si-O) films with different compositions were deposited on p-Si(100) substrates by using pulsed laser deposition technique. X-ray photoelectron spectra (XPS) showed that these films remained amorphous after annealing at 800℃ with RTA process in N2 for 60 s. The XPS spectra indi- cated that Zr-Si-O films with x=0.5 suffered no obvious phase separation after annealing at 800℃, and no interface layer was formed between Zr-Si-O film and Si substrate. While Zr-Si-O films with x >0.5 suffered phase separation to precipitate ZrO2 after annealing under the same condition, and SiO2 was formed at the interface. To get a good interface between Zr-Si-O films and Si substrate, Zr-Si-O films with bi-layer structure (ZrO2)0.7(SiO2)0.3/(ZrO2)0.5(SiO2)0.5/Si was deposited. The electrical properties showed that the bi-layer Zr-Si-O film is of the lowest equivalent oxide thickness and good interface with Si substrate. | Lü ShiCheng1,2, YIN Jiang1,2, XIA YiDong2,3, GAO LiGang2,3 & LIU ZhiGuo2,3 1 Department of Physics, Nanjing University, Nanjing 210093, China 2 National Laboratory of Solid Sate Microstructures, Nanjing University, Nanjing 210093, China 3 Department of Materials Science and Engineering, Nanjing University, Nanjing 210093, China | 2009 | Science China(Technological Sciences)2009，52，8： | 0 |
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